Detection method of degree of damage of plasma

A technology of damage degree and plasma, which is applied in the direction of semiconductor/solid-state device testing/measurement, measuring devices, and measuring electrical variables. Testing procedure, effect of reducing testing cost

Inactive Publication Date: 2011-05-04
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

All chips simulate the actual working environment by means of forced high temperature, long time or forced voltage, which will take a lot of time and manpower, resulting in increased detection costs; at the same time, the procedure for testing the threshold voltage drift of a large number of chips is complicated , the detection efficiency is low, and online detection cannot be realized; the forced voltage is applied, and the applied forced voltage is too high, which will cause damage to the chip

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  • Detection method of degree of damage of plasma
  • Detection method of degree of damage of plasma
  • Detection method of degree of damage of plasma

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Embodiment Construction

[0040] The method of the present invention provides a detection method for the degree of plasma damage, and only a part of the chips are extracted for the threshold voltage drift test, which reduces the detection cost; the leakage current is used as the detection standard, which can quickly detect plasma damage and improve detection efficiency , can carry out online real-time detection; no need to apply forced voltage, and will not cause damage to the chip.

[0041] figure 2 It is a schematic flow chart of the method for detecting the degree of plasma damage of the present invention. Such as figure 2 shown, including:

[0042] Execute step S101 to provide a batch of chips;

[0043] Execute step S102, providing the upper limit value of threshold voltage drift of the batch of chips;

[0044] Execute step S103, test the leakage current of the batch of chips, and obtain the leakage current distribution;

[0045] Execute step S104, extract some chips from the batch of chips,...

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Abstract

The invention relates to a detection method of degree of damage of plasma, which comprises the following steps: providing a batch of chips; providing the upper limit value of the threshold voltage shift of the batch of chips; testing the drain current of the batch of chips to obtain the distribution of the drain current; extracting part of chips from the batch of chips, testing the threshold voltage of the part of chips to obtain the threshold voltage shift and distribution thereof; determining the qualification rate of the part of chips according to the threshold voltage shift and the upper limit value; applying the qualification rate of the part of chips to the batch of chips to establish the drain current standard value of the batch of chips; and detecting the degree of damage of plasma of the batch of chips according to the drain current standard value of the batch of chips. The method can lower the detection cost, enhance the detection efficiency and realize on-line measurement without damaging the chips.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for detecting the degree of plasma damage. Background technique [0002] In the current field of semiconductor technology, the plasma process has become an indispensable part in the manufacture of metal oxide semiconductors (Mental Oxide Semiconductor, MOS transistor). It has many advantages, such as good directivity, low realization temperature, and simple process steps. However, in the plasma process, it is often accompanied by the bombardment of high-energy particles and photons. These radiations include ions, electrons, ultraviolet rays and weak X-rays. When high-energy particles hit the surface of the MOS transistor, it will have a negative impact on the performance of the chip. One of the common irreversible damages is the electrostatic breakdown phenomenon caused by the accumulation of ion charges, which is usually called plasma induce damage (PID). Such ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/66G01R19/00G01R19/165
Inventor 赵永江顺旺郭强简维廷
Owner SEMICON MFG INT (SHANGHAI) CORP
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