Detection method of degree of damage of plasma

A technology of damage degree and plasma, which is applied in the direction of semiconductor/solid-state device testing/measurement, measuring devices, and measuring electrical variables, etc., can solve problems such as complicated procedures, increased detection costs, and low detection efficiency, so as to improve detection efficiency and reduce The cost of testing and the effect of simplifying testing procedures
CN102044458BInactive Publication Date: 2012-12-26SEMICON MFG INT (SHANGHAI) CORP +1
2 Cites 2 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
SEMICON MFG INT (SHANGHAI) CORP
Publication Date
2012-12-26
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention relates to a detection method of degree of damage of plasma, which comprises the following steps: providing a batch of chips; providing the upper limit value of the threshold voltage shift of the batch of chips; testing the drain current of the batch of chips to obtain the distribution of the drain current; extracting part of chips from the batch of chips, testing the threshold voltage of the part of chips to obtain the threshold voltage shift and distribution thereof; determining the qualification rate of the part of chips according to the threshold voltage shift and the upper limit value; applying the qualification rate of the part of chips to the batch of chips to establish the drain current standard value of the batch of chips; and detecting the degree of damage of plasma of the batch of chips according to the drain current standard value of the batch of chips. The method can lower the detection cost, enhance the detection efficiency and realize on-line measurement without damaging the chips.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to the technical field of semiconductors, in particular to a method for detecting the degree of plasma damage. Background technique

[0002] In the current field of semiconductor technology, the plasma process has become an indispensable part in the manufacture of metal oxide semiconductors (Mental Oxide Semiconductor, MOS transistor). It has many advantages, such as good directivity, low realization temperature, and simple process steps. However, in the plasma process, it is often accompanied by the bombardment of high-energy particles and photons. These radiations include ions, electrons, ultraviolet rays and weak X-rays. When high-energy particles hit the surface of the MOS transistor, it will have a negative impact on the performance of the chip. One of the common irreversible damages is the electrostatic breakdown phenomenon caused by the accumulation of ion charges, which is usually called plasma induce damage (PID). Such ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More