High-power green laser for pumps at two ends of semiconductor diode
A diode and semiconductor technology, applied in the field of lasers, can solve the problems of low output power, difficult adjustment, easy damage of crystal, etc., and achieve the effect of high output power, good stability and broad market prospects
Inactive Publication Date: 2011-05-04
YUEMAO SCI & TECH IND ZHUHAI CITY +1
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Problems solved by technology
However, the development of high-power green laser products in China is currently lagging behind. The existing domestic green lasers have difficulties in adjusting the intracavity frequency multiplication output mode, the crystal is easily damaged for a long time, and the output power is low (usually less than 8W, the largest reported power in China. 8.8W), the laser output mode is not good, the output power instability is high (the power drops significantly for a long time and the power is low), and the equipment basically relies on imports
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[0013] like figure 1 As shown, a semiconductor diode double-terminal pumped high-power green laser includes a resonant cavity, coupling lenses 1 and 2, a laser medium 5, a frequency doubler 9 and a Q switcher 8 inserted into the resonant cavity, and the resonant cavity Composed of two end mirrors 6, 7 and two folding mirrors 3, 4, its optical path is in an X-shaped structure, and the laser medium 5 is on the optical path between the two folding mirrors 3, 4,
[0014] In this embodiment, a high-quality crystal Nd:YVO4 dedicated to end-pumped lasers is used as the laser medium 5, and the pump light generated by the pumping light source is focused on the laser medium 5 through coupling lenses 1 and 2, and the laser medium 5 emits fluorescence, and in the resonant cavity, it is repeatedly amplified by end mirrors 6, 7 and folding mirrors 3, 4 to form oscillations and generate 1064nm laser. The laser light is converted into 532nm pulsed laser light, which is output after being ref...
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The invention discloses a high-power green laser for pumps at two ends of a semiconductor diode, which comprises a resonant cavity, coupling lenses, laser medium, a frequency multiplier and a Q regulator, wherein the resonant cavity is of an X-shaped folded path structure which is composed of two end mirrors and two folded mirrors; pump light is focused on the laser medium, so as to generate fundamental frequency laser by excitation of the pumping of the two coupling lenses; and the fundamental frequency laser is amplified by oscillation in the resonant cavity, and forms pulse frequency doubling laser after a frequency multiplier which is inserted into the resonant cavity carries out frequency doubling and the Q switch carries out Q switching; and finally the pulse frequency doubling laser is output by an output mirror and a reflector in a reflection mode. In the high-power green laser, the X-shaped resonant cavity is used and the special output mirror which can penetrate through the fundamental frequency laser and reflect the frequency doubling laser is inserted into the resonant cavity, thus greatly improving the output efficiency of the laser; and the X-shaped resonant cavity has compact structure, thereby reducing the difficulty of the regulation, improving the stability of the structure, strengthening the stability of the laser output and being suitable for industrial processing equipment.
Description
technical field [0001] The invention relates to a laser, in particular to a semiconductor diode double-end pumped high-power green laser. Background technique [0002] The all-solid-state laser pumped by semiconductor laser is a new type of laser that appeared in the late 1980s. Laser information storage and processing, laser material processing, especially the development of solar cell processing technology in recent years, have a strong demand for high-power semiconductor green lasers. However, the development of high-power green laser products in China is currently lagging behind. The existing domestic green lasers have difficulties in adjusting the intracavity frequency multiplication output mode, the crystal is easily damaged for a long time, and the output power is low (usually less than 8W, the largest reported power in China. 8.8W), the laser output mode is not good, the output power instability is high (the power drops significantly for a long time and the power i...
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IPC IPC(8): H01S3/106H01S3/08H01S3/117H01S3/109H01S3/16
Inventor 陈文胜于连君刘辉范琴
Owner YUEMAO SCI & TECH IND ZHUHAI CITY