Check patentability & draft patents in minutes with Patsnap Eureka AI!

Radiation system, radiation collector, radiation beam conditioning system, spectral purity filter for a radiation system and method of forming a spectral purity filter

A spectral purity and adjustment system technology, applied in the field of forming spectral purity filters, can solve the problems of not being able to withstand high thermal loads, not being able to provide filtering, and size limitations

Active Publication Date: 2011-05-04
ASML NETHERLANDS BV
View PDF3 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, spectral purity filters that have been developed may not be able to withstand high thermal loads, may be limited in size and may not provide the desired filtering

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Radiation system, radiation collector, radiation beam conditioning system, spectral purity filter for a radiation system and method of forming a spectral purity filter
  • Radiation system, radiation collector, radiation beam conditioning system, spectral purity filter for a radiation system and method of forming a spectral purity filter
  • Radiation system, radiation collector, radiation beam conditioning system, spectral purity filter for a radiation system and method of forming a spectral purity filter

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] figure 1 An embodiment of a lithographic apparatus is schematically shown, which may be or comprise an embodiment of the invention. The apparatus includes: an illumination system (illuminator) IL configured to condition a radiation beam B (e.g., extreme ultraviolet (EUV) radiation); a support structure or patterning device support (e.g., a mask table) MT configured for supporting a patterning device (such as a mask or reticle) MA and connected to a first positioning device PM configured for precisely positioning the patterning device; a substrate table (such as a wafer table) WT configured to hold a substrate (e.g. a resist-coated wafer) W connected to a second positioning device PW configured to precisely position the substrate; and a projection system (e.g. a reflective projection lens system) PS configured with for projecting the pattern imparted by the patterning device MA onto the radiation beam B onto a target portion C of the substrate W (eg comprising one or mo...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Depthaaaaaaaaaa
Login to View More

Abstract

A radiation system is configured tp generate a radiation beam. The radiation system comprising a chamber that includes a radiation source configured to generate radiation, a radiation beam emission aperture, and a radiation collector configured to collect radiation generated by the source, and to transmit the collected radiation to the radiation beam emission aperture. The radiation collector includes a spectral purity filter configured to enhance a spectral purity of the radiation to be emitted via the aperture. The spectral purity filter comprising: a base substrate; a multilayer stack on the base substrate, the multilayer stack comprising a plurality of alternating layers; and a plurality of recesses in a top side of the multilayer stack, the recesses being configured to allow the radiation having the first wavelength to be reflected in the first direction and to reflect the radiation having the second wavelength in the second direction; wherein the recesses are configured such that, in cross-section, they have a symmetric profile.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of US Provisional Application 61 / 057,704, filed May 30, 2008, which is hereby incorporated by reference in its entirety. technical field [0003] The invention relates to radiation systems, radiation collectors, radiation beam conditioning systems, spectral purity filters for radiation systems and methods for forming spectral purity filters. Background technique [0004] A lithographic apparatus is a machine that applies a desired pattern to a substrate, usually a target portion of the substrate. For example, lithographic equipment may be used in the manufacture of integrated circuits (ICs). In this case, a patterning device, alternatively referred to as a mask or reticle, may be used to generate the circuit pattern to be formed on the individual layers of the IC. The pattern can be transferred onto a target portion (eg, comprising a portion, one or more dies) on a substrate (eg, a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G02B5/08G02B5/18G02B5/20G02B5/28G03F7/20
CPCG03F7/70191G03F7/70116G03F7/70575
Inventor V·巴尼内W·德勃伊J·鲁普斯特拉A·范帝杰赛欧东克G·斯温克尔斯J·范斯库特
Owner ASML NETHERLANDS BV
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More