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Photosensitive resin composition

A technology of photosensitive resin and composition, which is applied in the field of photosensitive resin composition, and can solve problems such as longer exposure time, increased number of steppers, and low sensitivity

Inactive Publication Date: 2011-05-04
ASAHI KASEI E-MATERIALS CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The stepper is a very expensive instrument. Therefore, when the photosensitive resin composition has a low sensitivity, the exposure time required to form a relief pattern becomes longer, and the number of required steppers increases, resulting in an exposure process cost. Increase

Method used

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  • Photosensitive resin composition
  • Photosensitive resin composition
  • Photosensitive resin composition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0241] Hereinafter, the present invention will be described based on reference examples and working examples. The evaluation of the photosensitive resin composition in an Example was performed by the following method.

[0242]

[0243] (1) Evaluation of patterning characteristics

[0244] With a spin coater (Dspin SW-636, manufactured by DAINIPPON SCREEN MFG.CO., LTD.), the photosensitive resin composition is spin-coated on a 5-inch silicon wafer, and prebaked at 125°C for 180°C on a hot plate. Seconds, a coating film with a film thickness of 9.0 μm was formed. The coating film was heat-treated (cured) at 320° C. for 1 hour in a nitrogen atmosphere using a temperature-rising programmable curing furnace (VF-2000 type, manufactured by Koyo Thermo Systems Co., Ltd.) to obtain a cured film on a silicon wafer . The film thickness was measured with an optical film thickness measuring device (LAMBDA-ACE VM-1200, manufactured by DAINIPPON SCREEN MFG.CO., LTD.) at a refractive ind...

reference example 1

[0257]In a separable flask with a capacity of 2L, 197.8g (0.54mol) of 2,2-bis(3-amino-4-hydroxyphenyl)-hexafluoropropane, 75.9g (0.96mol) of pyridine and 692g of DMAc were placed at room temperature Mix and dissolve with stirring at 25 °C. Separately, a solution obtained by dissolving 19.7 g (0.12 mol) of 5-norbornene-2,3-dicarboxylic anhydride in 88 g of DMDG was dropped into the above-mentioned flask through the dropping funnel. The time required for the dropwise addition was 40 minutes, and the maximum temperature of the reaction solution was 28°C.

[0258] After the dropwise addition, it was heated to 50°C in a hot water bath and stirred for 18 hours. Then, the IR spectrum of the reaction solution was measured, and it was confirmed that a 1385cm -1 and 1772cm -1 The characteristic absorption of the imino group.

[0259] Then, the reaction solution was cooled to 8° C. with a water bath, and a solution obtained by dissolving 142.3 g (0.48 mol) of 4,4’-diphenyl ether dicar...

reference example 2

[0265] In Reference Example 1, 125.35 g (0.48 mol) of octahydro-1H-4,7-methyleneindene dicarboxylic acid dichloride was used instead of 142.3 g (0.48 mol) of 4,4'-diphenyl ether dicarboxylic acid acid dichloride, and 139.45 g (0.54 mol) of 2,2-bis(3-amino-4-hydroxyphenyl)-propane was used instead of 197.8 g (0.54 mol) of 2,2-bis(3-amino-4- A polybenzoxazole resin precursor (P-2) was obtained in exactly the same manner as in Reference Example 1 except that hydroxyphenyl)-hexafluoropropane. The polystyrene conversion weight average molecular weight of this resin was 22000 (Mw).

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PUM

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Abstract

Disclosed is a novel photosensitive resin composition having positive lithographic properties, which has excellent storage stability, while exhibiting high sensitivity and excellent long-term stability of sensitivity after exposure. A method for producing a cured relief pattern using the composition and a semiconductor device having the cured relief pattern are also disclosed. The photosensitive resin composition is characterized by containing (A) 100 parts by mass of a hydroxypolyamide containing a structure represented by general formula (1) (wherein X1, X2, Y1, Y2, l and m are as defined in claims), (B) 0.01-30 parts by mass of an alkoxyalkyl group-containing compound represented by general formula (2) (wherein k, X, R1, R2, n, p and q are as defined in claims), and (C) 1-100 parts by mass of a diazoquinone compound.

Description

technical field [0001] The present invention relates to a photosensitive resin composition used as a surface protection film and an interlayer insulating film of a semiconductor device, a method for producing a heat-resistant cured relief pattern using the photosensitive resin composition, and a method for forming a cured relief pattern having the same semiconductor device. Background technique [0002] Conventionally, polyimide resins having excellent heat resistance, electrical properties, mechanical properties, etc. have been used for surface protection films and interlayer insulating films of semiconductor devices. This polyimide resin is generally supplied in the form of a photosensitive polyimide precursor composition at present, and can be used in the substrate by coating on a substrate, patterning with active light, development, thermal imidization, etc. It is easy to form a surface protection film, an interlayer insulating film, etc. on a semiconductor device, and ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/023G03F7/004
CPCG03F7/0233C08L77/06G03F7/0226G03F7/40
Inventor 丹羽基博涩井智史金田隆行
Owner ASAHI KASEI E-MATERIALS CORPORATION