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Plasma processing apparatus

A plasma and treatment device technology, applied in the field of plasma treatment devices, can solve the problems of uneven electrode potential and current distribution, uneven plasma, etc., and achieve the effect of uniform plasma treatment

Inactive Publication Date: 2011-05-11
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If such a standing wave is generated in this way, the potential and current distribution on the electrodes will become uneven, and the plasma excited by the applied high-frequency power will also become uneven, making it difficult to perform uniform plasma processing on large substrates to be processed.

Method used

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Experimental program
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no. 1 approach

[0051] First, a first embodiment of the present invention will be described.

[0052] figure 1 is a cross-sectional view showing the plasma processing apparatus according to the first embodiment of the present invention, figure 2 is a plan view showing its upper electrode, image 3 It is an enlarged partial cross-sectional view showing a part of the shower head functioning as the upper electrode and the upper sealing gland.

[0053] The plasma processing apparatus 1 is configured as a sheet-type plasma processing apparatus, and has a cylindrically shaped chamber (processing container) 2 , for example, whose surface is made of alumite-treated (anodized) aluminum. A substrate mounting table (substrate supporting member) 3 for mounting (supporting) a large rectangular substrate G is provided at the bottom of the chamber 2 .

[0054] The substrate mounting table 3 is made of metal such as aluminum, and is supported on the bottom of the chamber 2 via an insulating member 4 . T...

no. 2 approach

[0079] Next, a second embodiment of the present invention will be described.

[0080] This embodiment is an embodiment in which the present invention is applied to a batch-type plasma processing apparatus that performs plasma processing on a plurality of substrates.

[0081] Figure 6 It is a cross-sectional view showing a plasma processing apparatus according to a second embodiment of the present invention. This plasma processing device 1' is a device for processing five substrates G at a time, and is compatible with figure 1The apparatus has basically the same structure as a plasma processing apparatus, and has a chamber (processing container) 51 formed of, for example, aluminum whose surface has been subjected to anodized (anodized) treatment and formed into a prismatic shape. A substrate mounting table 52 for mounting the lowermost substrate G is provided at the bottom of the chamber 51 . The substrate mounting table 52 is made of metal such as aluminum, and is supporte...

no. 3 approach

[0095] Next, a third embodiment of the present invention will be described.

[0096] Here, another example of the upper electrode is shown. Figure 7 It is a plan view showing the upper electrode in the third embodiment of the present invention.

[0097] The upper electrode 95 in this embodiment, such as Figure 7 As shown, it consists of two comb-shaped electrode parts 96 , 97 , by means of which an electrode plane is formed. These electrode members 96 , 97 are the same as the electrode members 16 , 17 of the first embodiment, and have a plurality of booklet-shaped comb teeth 31 extending in parallel at equal intervals, and one end of the plurality of comb teeth 31 passes through the connecting portion 32 Link, the other end becomes the end. In addition, a power supply portion 33 is formed on the connection portion 32 . Furthermore, these electrode members 96 and 97 are opposed to each other, and the comb teeth of the electrode member 96 and the comb teeth of the electrod...

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Abstract

The invention provides a plasma processing apparatus, wherein a substrate is subject to plasma treatment uniformly.The plasma processing apparatus comprises a chamber (2), a substrate placing table (3) arranged inside the chamber for placing substrates (G), an upper electrode (15) arranged with respect to the substrate placing table (3), a spray head (5) for introducing the gas to be treated into the chamber (2) and a gas exhaust device (28) for the exhaust of the chamber (2), wherein high frequency power is applied on the upper electrode (15).The upper electrode (15) consists of two electrode parts (16, 17).When high frequency power is applied on the electrode parts (16, 17), standing waves are formed on each of the electrode parts.The configuration of the electrode parts (16, 17) or the distribution of the standing waves formed on the electrode parts is adjusted by the sum of the plurality of standing waves, wherein the voltage distribution in the electrode plane becomes uniform.

Description

technical field [0001] The present invention relates to a plasma processing apparatus for performing plasma processing on a substrate. Background technique [0002] For example, in the manufacturing process of a flat panel display (FPD) represented by a liquid crystal display (LCD), dry etching (dry etching), ashing (ashing), CVD (Chemical Vapor Deposition (chemical vapor deposition)) and other plasma treatments. In addition, plasma treatment is also used to form an amorphous silicon film or a microcrystalline silicon film used in a solar cell panel. [0003] As a plasma processing apparatus for performing such plasma processing, a device is often used in which a pair of flat plate electrodes on which a lower electrode of a substrate to be processed and an upper electrode opposite to the lower electrode are placed are arranged in a chamber, and one of them is A high-frequency electric field is formed between these electrodes by applying high-frequency power on the side, an...

Claims

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Application Information

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IPC IPC(8): H01J37/32H01J37/04
CPCH01J37/32091H01J37/321H01J37/32183H01J37/3244H01J37/32458H01J37/32541H01J37/32568H01J37/32715H01J37/32834H05H1/46H05H1/4645
Inventor 田中诚治古屋敦城
Owner TOKYO ELECTRON LTD
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