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Method for fabricating III-nitride semiconductor material pn (phosphorus nitride) junction

A nitride semiconductor and manufacturing method technology, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, circuits, etc., can solve the problems of decreased crystal quality of the secondary growth layer, complexity of the growth process, and insignificant effect of memory effect, etc.

Inactive Publication Date: 2011-05-11
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, since the Mg atoms entering the n-type layer have a lot to do with the redistribution of Mg in the Mg-rich layer formed when growing the p-type layer, the method of purging the growth chamber for a long time or adopting the method of secondary epitaxy has a great effect on reducing the memory of Mg The effect is not obvious, and it causes the complexity of the growth process, which will easily lead to the decrease of the crystal quality of the secondary growth layer and reduce the performance of the pn junction.

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  • Method for fabricating III-nitride semiconductor material pn (phosphorus nitride) junction
  • Method for fabricating III-nitride semiconductor material pn (phosphorus nitride) junction
  • Method for fabricating III-nitride semiconductor material pn (phosphorus nitride) junction

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Embodiment Construction

[0022] see figure 1 As shown, the present invention proposes a method for making a III-nitride semiconductor material pn junction, comprising the steps of:

[0023] Step 1: growing p-type GaN-based material 10 on a substrate 100; when growing p-type GaN-based material 10 on substrate 100, dipentyl magnesium is used as a p-type dopant source;

[0024] Step 2: epitaxial non-doped GaN-based material 11 on the p-type GaN-based material 10; the growth temperature of the non-doped GaN-based material 11 is in the range of 900°C-1050°C, and the thickness is 5-15nm;

[0025] Step 3: growing a non-doped thin layer 12 on the non-doped GaN-based material 11; the non-doped thin layer 12 is a non-doped GaN-based material; the growth temperature of the non-doped thin layer 12 is 550°C In the range of -800°C, the thickness is 3-10nm; when growing the non-doped thin layer 12, triethylgallium or trimethylgallium is used as the metal-organic source of gallium;

[0026] Step 4: growing n-type G...

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Abstract

The invention relates to a method for fabricating a III-nitride semiconductor material pn (phosphorus nitride) junction, comprising the following steps of: 1, growing a p (phosphorus) type GaN-based material on a substrate; 2, epitaxially growing an undoped GaN-based material on the P type GaN-based material; 3, growing an undoped thin layer on the undoped GaN-based material; and 4, growing an n (nitrogen) type GaN-based material on the undoped thin layer.

Description

technical field [0001] The invention relates to the technical field of semiconductor materials, in particular to a method for manufacturing a pn junction of a III-nitride semiconductor material. Background technique [0002] III-Nitride is the third-generation new semiconductor material after the first and second-generation semiconductor materials such as Si and GaAs. Among them, GaN has many advantages as a wide-bandgap semiconductor material, such as high saturation drift speed, large breakdown voltage, It has excellent carrier transport performance and can form AlGaN, InGaN ternary alloys and AlInGaN quaternary alloys, etc., and it is easy to make GaN-based pn junctions. In view of this, GaN-based materials and devices have been extensively and in-depth researched in recent years, and the growth of GaN-based materials by MOCVD technology has become increasingly mature; in terms of device research, GaN-based LEDs, LDs and other optoelectronic devices and GaN-based high mob...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/18H01L21/205
Inventor 冉军学王晓亮李建平胡国新肖红领王翠梅杨翠柏李晋闽
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI