Groove metal-oxide semiconductor field effect transistor and manufacture method thereof

Abstract

The invention discloses a grooved metal-oxide semiconductor field effect transistor and a manufacture method thereof. The depth of terminal area groove gratings is more than or equal to the junction depth of a terminal area midbody zone, and the zone between every two adjacent terminal area groove gratings also has a suspended voltage, therefore, an element has higher breakdown voltage and lower gate-drain charge.

Description

Technical field [0001] The invention relates to a unit structure, device structure and process manufacturing of a semiconductor power device, in particular to a unit structure and process method of a trench MOSFET (metal oxide semiconductor field effect transistor). Background technique [0002] In the prior art, the traditional trench metal oxide semiconductor field effect transistor (MOSFET) structure that uses a trench gate with a floating voltage as a terminal region is encountering severe technical challenges. For example, in the prior art of U.S. Patent No. 6,462,376, a trench MOSFET structure using a trench gate with a floating voltage as the terminal region is disclosed. At the same time, the n+ source region 121 is located in every two adjacent terminal regions. Between the trench gates 111, such as Figure 1A Shown. This structure will cause a large leakage current between the drain and the source, because under the drain / source bias voltage, the P-type body region 108 ...

AI Technical Summary

Problems solved by technology

This structure will cause a large leakage current between the drain and source, because under the drain / source bias voltage, the P-type body region 108 and the termination region trench gate 111 are not shorted to the source, so that The channel region of the termination region is turned on

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