Method for Sr-Ti-O-base film formation and recording medium
A film forming method, sr-ti-o technology, applied in thin film/thick film capacitors, gaseous chemical plating, coating, etc., can solve problems such as difficult crystallization, and achieve the effect of high dielectric constant
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Embodiment 1
[0078] in the above figure 1 In the film forming device, adjust the power of the lamp, set the temperature of the mounting table to 300°C, make the 200mm Si wafer reach 290°C under the pressure during film formation, and use the arm of the transfer robot to carry it into the processing container. The Si wafer of the Ru film of the electrode is formed into a Sr-Ti-O system film. As the Sr raw material, use Sr(C 5 (CH 3 ) 5 ) 2 , which was kept in a container heated to 160° C.; as a carrier gas, Ar gas was supplied into the processing container by a bubbling method. In addition, as a Ti raw material, Ti(OiPr) is used 4 , kept in a container heated to 45° C., and similarly as a carrier gas, Ar gas was supplied into the processing container by the bubbling method. In addition, as an oxidizing agent, use O by passing O to the ozone generator at 500mL / min (sccm). 2 Gas, feed N at 0.5mL / min (sccm) 2 180g / m produced by gas 3 N Concentration O 3 .
[0079] In this way, after...
Embodiment 2
[0096] Here, use figure 1 The film-forming device of the present invention adopts the same temperature conditions, film-forming raw materials and oxidant as in Example 1 to form a Sr-Ti-O-based film. First, in the film formation and annealing of the first Sr-Ti-O film, the O 3 The concentration is 100g / m 3 N, the sequence is set as: repeating the SrO film forming step of steps 1 to 4 three times, repeating the TiO film forming step of steps 5 to 8 twice, repeating the SrO film forming step twice, repeating two steps TiO film-forming step, repeated SrO film-forming step twice, and TiO film-forming once, the sequence was regarded as a cycle, and 7 cycles were repeated. In addition, under the same conditions as in Example 1 next. Thus, a first Sr-Ti-O film having a thickness of 5 nm was formed. Next, in forming the second Sr-Ti-O film, O 3 The concentration is 100g / m 3 N, the sequence is the same as that of the first Sr—Ti—O film formation described above, and the condition...
Embodiment 3
[0099] Here, when forming the second Sr-Ti-O film, O as an oxidant 3 The concentration is 180g / m 3 N, set the film-forming sequence of the second Sr-Ti-O film as follows: repeat the SrO film-forming steps of steps 1-4 twice, repeat the TiO film-forming steps of steps 5-8 twice, repeat Carry out two SrO film film-forming steps, carry out one TiO film film-forming step, this sequence is regarded as a cycle, repeat 22 cycles, except that, carry out Sr-Ti-O system film in the same way as in Example 2. Film forming treatment and annealing treatment. As a result, a Sr-Ti-O film having the same thickness and crystal state as in Example 2 was obtained.
[0100] For the Sr-Ti-O film formed in this way, the SiO 2 Capacitance conversion film thickness (EOT) and leakage current (Jg), the results are 1.5nm, 3×10 -6 A / cm 2 (at 1V), the leakage current value is lower than embodiment 2.
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Abstract
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