Method for preparing electronic grade ultrahigh purity hydrofluoric acid
A hydrofluoric acid, electronic-grade technology, applied in the field of electronic chemicals, can solve problems such as pollution, excessive potassium and manganese impurity content, and unclean removal of metal ions, etc., and achieve the effect of stable process, easy control, and suitable for promotion
Inactive Publication Date: 2011-06-15
SUZHOU CRYSTAL CLEAR CHEMICAL CO LTD
View PDF3 Cites 19 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Its disadvantage is that when anhydrous hydrogen fluoride is distilled from the solution, it may be polluted by volatilized potassium permanganate compounds, which will easily cause the content of potassium and manganese impurities to exceed the standard, making the product quality unstable
Chinese Invention Patent Application Publication No. CN101125639A uses a chelating agent to treat hydrofluoric acid after rectification, and some metal ions cannot be removed, which brings a certain load to the subsequent ion exchange system, shortens the life of the ion exchange resin, and is not conducive to the product. the stability of
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreExamples
Experimental program
Comparison scheme
Effect test
Embodiment 1
Embodiment 2
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More
Abstract
The invention provides a method for preparing electronic grade ultrahigh purity hydrofluoric acid. The method comprises the following technical steps: (1) pretreating industrial anhydrous hydrogen fluoride; (2) treating in a reboiler; (3) distilling; (4) cooling; (5) absorbing; (6) performing ion exchange adsorption; and (7) filtering. The invention has the following beneficial effects: hydrogen peroxide is used to oxidize As<3+>, thus the problem that As<3+> is difficult to remove can be completely solved; chelating agent and a weak-base anion-exchange resin system are adopted to deeply remove a small amount of metal ions and impurities; through secondary filtration, all the indexes of hydrofluoric acid can meet the requirements of the electronic grade ultrahigh purity agent; and the method of the invention can be used for large-scale production, and the technology is stable, is easy to control and is suitable for popularization.
Description
A method for preparing electronic grade ultra-high purity hydrofluoric acid technical field The invention belongs to the technical field of electronic chemicals, in particular to a preparation method of hydrofluoric acid. Background technique Hydrofluoric acid (HydrofluoricAcid, HF), relative molecular weight 20.006, is a colorless liquid with a strong pungent smell and corrosiveness. The density (25° C.) of hydrofluoric acid is 1.13 g / ml (40% by weight). Electronic grade ultra-high-purity hydrofluoric acid is an important chemical commonly used in semiconductor manufacturing. It is mainly used in large-scale integrated circuits as a cleaning agent and corrosive agent. With the continuous development of ultra-large-scale integrated circuit technology, related companies have put forward higher requirements for ultra-high-purity chemical reagents. At present, because hydrofluoric acid is used for cleaning and corrosion in large-scale integrated circuits, the existence of ...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More
IPC IPC(8): C01B7/19
Inventor 刘兵朱孔浩吴天舒胡健康
Owner SUZHOU CRYSTAL CLEAR CHEMICAL CO LTD
Who we serve
- R&D Engineer
- R&D Manager
- IP Professional
Why Patsnap Eureka
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com