Metal etching liquid composition and etching method

A metal etching and composition technology, applied in the field of metal etching liquid composition, can solve the problems of restricting the use of etching liquid composition, difficult removal of molybdenum residue, unfavorable manufacturing process, etc., so as to reduce the risk of defects, facilitate stability, prolong The effect of service life

Inactive Publication Date: 2011-06-22
PROSPERCHEM
View PDF3 Cites 43 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the higher the concentration of organic acid, the lower the etching rate of molybdenum, and the harder it is to remove the molybdenum residue, so it is not conducive to the subsequent manufacturing process.
[0007] Because existing etchant compositions still have many defects, thereby limiting the use of existing etchant compositions, in view of this, the industry still urgently needs the metal etchant composition that can solve above-mentioned many problems at present

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Metal etching liquid composition and etching method
  • Metal etching liquid composition and etching method
  • Metal etching liquid composition and etching method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1 to 20

[0042] Embodiment 1 to 20: Preparation and use of etching solution composition

[0043] Such as image 3 As shown in step 110, an etching solution composition containing the ingredients shown in Table 1 and the weight percentage concentrations listed in Table 2 was prepared, wherein the aqueous medium used was deionized water. Subsequently, if image 3 As shown in step 120, the temperature of the etching solution composition is adjusted to a preset 30° C. in a constant temperature water bath.

[0044] Then, using the known vapor deposition method in the technical field of the present invention, such as Figure 4 As shown, a multilayer metal 30 containing a molybdenum metal layer 31 and a copper metal layer 32 is sequentially formed on a glass substrate 20, wherein the formed multilayer metal 30 has a thickness of 2150 to And wherein, the thickness of the molybdenum metal layer 31 is 150 to And the thickness of copper metal layer 32 is 2000 to or as Figure 11 As shown...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a metal etching liquid composition and an etching method, and provides a metal etching liquid composition for etching copper, a copper alloy, molybdenum, a molybdenum alloy, a multilayer alloy containing the copper alloy and the molybdenum alloy, or copper / molybdenum multilayer metal. The metal etching liquid composition comprises the following components in percentage by weight: 6 to 30 percent of oxidant, 0.1 to 10 percent of chelating agent, 0.1 to 5 percent of nitrogen-containing compound, 0.2 to 10 percent of inorganic salt and the balance of water-based medium, wherein the inorganic salt comprises 0.1 to 5 weight percent of sulfate and 0.1 to 5 weight percent of phosphate.

Description

technical field [0001] The present invention relates to a multilayer alloy for etching copper (Cu), copper alloy (Cu alloy), molybdenum (Mo), molybdenum alloy (Mo alloy), copper alloy / molybdenum alloy or copper / molybdenum (Cu / Mo) A metal etchant composition for multilayer metals, in particular to a method for etching metal using the metal etchant composition. Background technique [0002] In the current semiconductor manufacturing process or flat panel display manufacturing process, metals such as chromium (Cr), molybdenum (Mo), copper (Cu), aluminum (Al), titanium (Ti) or their alloys are often used as conductive materials. Material. In the past, in order to effectively etch metal conductive materials, etchant compositions containing acids and oxidants were often used for chromium (Cr), aluminum (Al), titanium (Ti), molybdenum (Mo), Molybdenum / aluminum (Mo / Al) multilayer metal or titanium / aluminum (Ti / Al) multilayer metal is etched. However, due to the different types of...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/14C23F1/16C23F1/02
Inventor 颜子钧李家兴邱少华雷伯钧李森雄吕志鹏
Owner PROSPERCHEM
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap