New multicrystal silicon reduction production technology

A new technology, polysilicon technology, applied in the direction of silicon compounds, inorganic chemistry, non-metallic elements, etc., can solve problems such as burden, low-efficiency utilization of raw material trichlorosilane, increased energy consumption, etc.

Inactive Publication Date: 2011-06-29
LIANYUNGANG ZHONGCAI TECH
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Problems solved by technology

These figures show that the reaction (2) is absolutely dominant, which not only results in inefficient utilization of the raw material trich

Method used

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Experimental program
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Example Embodiment

A new polysilicon reduction production process, the whole process keeps the pressure in the reduction furnace at 0.1~0.6Mpa;

①After starting the reduction furnace, the surface temperature of the silicon core is controlled between 1100°C and 1250°C by adjusting the current, and the H2 / HSiCl3 mixture with a substance ratio of 2 to 4 is set at a total initial flow rate of 0.005 to 0.01 m in the furnace. / s react in the furnace, increase the ratio of H2 / HSiCl3 to 6~8 through the flow control valve, and the increase range is 0.1 / h, and increase the flow rate in the furnace to 0.06~0.08 at an acceleration of 0.001~0.002m / s / h. After m / s, keep the reaction for 10~20h.

②When the diameter of the silicon rod is 50~70mm, the current increase stops. At this time, the total flow rate is kept unchanged, and the surface temperature of the silicon core is reduced to 1050~1100℃. ~10h.

③Recover and increase the current, keep the surface temperature of the silicon core at 1080~1100℃, and at t...

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Abstract

The invention relates to a new multicrystal silicon reduction production technology. In the initial stage of the reaction, by increasing the temperature, the deposition rate can be increased and the silicon rod can grow fast; as the total flow rate in the furnace is low, even the hydrogen content is low, the occurrence rate of the side reaction is relatively low; in the medium stage of the reaction, when the silicon rod grows continuously, by reducing the temperature and increasing the hydrogen content, the pyrolytic reaction and side reaction can be inhibited; by increasing the total flow rate, the reaction rate can be increased; and in the later stage of the reaction, by further increasing the hydrogen content and the flow rate and maintaining the temperature, the violent side reaction caused by the increase of the active area can be inhibited. By optimizing the reaction conditions of reduction, trichlorosilane can be effectively converted and the silicon rod can grow better; meanwhile, the pyrolytic reaction can be inhibited, the main reduction reaction can be performed better and the effect is obvious; and the by-products can be reduced and the comprehensive cost of multicrystal silicon can be reduced.

Description

A New Process for Polysilicon Reduction Production technical field The invention relates to a polysilicon production technology, in particular to a new polysilicon reduction production process. Background technique At present, the vast majority of domestic polysilicon factories use the modified Siemens method to manufacture rod-shaped polysilicon, that is, in a bell furnace, at a certain temperature and pressure, in trichlorohydrosilane and hydrogen, through chemical vapor deposition (CVD) method, high temperature Reduction of trichlorosilane to prepare rod-shaped polysilicon. Since many side reactions occur in this reduction reaction, the possible main reactions are as follows: SiHCl3+H2=Si+3HCl↑(1050-1100℃) 4SiHCl3=Si+2H2↑+3SiCl4 (thermal decomposition) 2SiHCl3=Si+2HCl↑+SiCl4 (thermal decomposition) SiHCl3=SiH2Cl2+HCl↑(900-1000℃) Si+2HCl≒SiH2Cl2 (>1200℃ or low temperature corrosion) SiHCl3=SiH2Cl2+SiCl4 (Si+SiCl4≒SiCl2) SiCl4+2H2=Si+4HCl↑ (at high temper...

Claims

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Application Information

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IPC IPC(8): C01B33/035
Inventor 刘岗周大荣孙建荣蒋敏孙兵胡成发
Owner LIANYUNGANG ZHONGCAI TECH
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