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Heterojunction bipolar transistor (HBT) and method for forming same

A heterojunction bipolar, transistor technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of high cost and complex structure, and achieve the effect of low cost and simple structure

Active Publication Date: 2011-06-29
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] However, the existing methods are complex in structure and high in cost

Method used

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  • Heterojunction bipolar transistor (HBT) and method for forming same
  • Heterojunction bipolar transistor (HBT) and method for forming same
  • Heterojunction bipolar transistor (HBT) and method for forming same

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Embodiment Construction

[0027] The invention will be described in more detail hereinafter with reference to the accompanying drawings showing embodiments of the invention. However, this invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In these drawings, the size and relative sizes of layers and regions may be exaggerated for clarity.

[0028] It will be understood that when an element or layer is referred to as being "on" or "connected to" another element or layer, it can be directly on or directly connected to the other element or layer. Layers, or the presence of intervening elements or layers. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element or layer, there are no intervening elements or lay...

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Abstract

The invention provides a method for forming a heterojunction bipolar transistor (HBT) with elevated extrinsic base regions. The method comprises the following steps: forming an N<+> injection region on a P-type substrate to serve as a collector region; forming a hetero-epitaxial layer on the surface of the substrate to serve as an intrinsic base region; forming an N<+> injection region on the intrinsic base region to serve as an emitter region; forming polysilicon gates at the two sides of the emitter region; and forming hetero-epitaxial layers on the polysilicon gates to serve as elevated extrinsic base regions. The method has the following beneficial effects: the polysilicon gates are formed at the two sides of the emitter region and the elevated extrinsic base regions are formed on the polysilicon gates; and the polysilicon gates are formed at the two sides of the emitter region by adopting the conventional gate mask in the CMOS (complementary metal oxide semiconductor) process, so the method can be compatible with the existing BiCMOS process, without extra masks, and the method has the advantages of simple structure and lower cost.

Description

technical field [0001] The invention mainly relates to a heterojunction bipolar transistor, in particular to a heterojunction bipolar transistor with a raised extrinsic base region formed in an integrated heterojunction bipolar transistor and a complementary metal semiconductor (BiCMOS) process. Background technique [0002] A heterojunction bipolar transistor (HBT, Heterojunction Bipolor Transistar) refers to a transistor whose emitter region, base region and collector region are made of materials with different forbidden band widths. Heterojunction bipolar transistors are different from traditional bipolar transistors. The emitter material of the former is different from the substrate material, while the entire material of the latter is the same, so it is called a heterojunction device. [0003] The structural feature of the heterojunction bipolar transistor is the emitter with a wide bandgap width, which greatly improves the carrier injection efficiency of the emitter jun...

Claims

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Application Information

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IPC IPC(8): H01L21/331H01L29/737H01L29/06H01L29/10
Inventor 陈乐乐孙涛
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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