Trench MOS (metal-oxide semiconductor) device
A technology of MOS devices and MOS transistors, which is applied in the field of trench MOS devices, can solve problems such as reducing device on-resistance, increasing leakage current, and reliability issues, and achieves the goals of improving reliability, surge capacity, and increasing integration Effect
Active Publication Date: 2011-06-29
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology
Direct contact between metal and silicon is formed through the 219b region, forming a Schottky contact to reduce the on-resistance of the entire device, but such a structure requires an additional area on the chip surface to achieve
However, due to the direct contact between the metal of the Schottky device itself and Si will cause reliability problems, and as the temperature increases, the leakage current will increase sharply, which leads to the failure of some applications.
Method used
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Embodiment Construction
[0016] The invention discloses a trench MOS device, which includes a plurality of MOS tube units, such as Figure 5 As shown, the area where the multiple MOS tube units are located includes drain metal 101, N-type substrate 100, and N-type epitaxial layer 102 from bottom to top. At the position where the MOS tube units are located, the There is also a P-type MOS tube body 103 on the N-type epitaxial layer, and a plurality of MOS tube grooves 104 run through the P-type MOS tube body 103 to reach the N-type epitaxial layer 102, between the MOS tube grooves 104 and the P-type MOS tube body 103 The source 105 and the gate of the MOS transistor are arranged on it, and there is also an SBR rectifier device on the N-type epitaxial layer 102 next to the MOS transistor unit, which includes a plurality of SBR channels on the N-type epitaxial layer 102, each Both above the SBR channel include the SBR gate oxide layer 106 in contact with the N-type epitaxial layer 102 and the SBR polysili...
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Abstract
The invention discloses a trench MOS (metal-oxide semiconductor) device which comprises a plurality of MOS tube units, wherein an SBR (super barrier rectifier) device is further arranged on an N type epitaxial layer beside the MOS tube units, the SBR device comprises a plurality of SBR trenches on the N type epitaxial layer, an SBR gate oxide layer being in contact with the N type epitaxial layerand an SBR polysilicon gate on the gate oxide layer are arranged above each SBR trench, P type SBR bodies are further arranged between the SBR trenches, SBR drain regions are further arranged in the positions where the P type SBR bodies are in contact with the SBR gate oxide layers, and source metal is used for enabling sources of MOS tubes, the SBR polysilicon gates and the SBR drain regions to be in short circuit. The trench MOS tubes and the SBR are integrated together in the trench MOS device, thereby greatly improving the reliability and the surge capacity of the trench MOS device and improving the integration level of the device.
Description
technical field [0001] The invention relates to a semiconductor device, especially a trench MOS device. Background technique [0002] Publication No. is CN1547765A in the Chinese patent application publication document, discloses a kind of MOS device with Schottky, and its structure is as follows figure 1 As shown, the equivalent circuit diagram is shown in figure 2 shown. In this technical solution, a Schottky diode is connected in parallel to the MOSFET to reduce the forward conduction voltage of the entire device, thereby reducing power loss. A direct contact between metal and silicon is formed through the region 219b to form a Schottky contact to reduce the on-resistance of the entire device, but such a structure requires an additional area on the chip surface to realize. However, the direct contact between the metal of the Schottky device itself and Si will cause reliability problems, and as the temperature increases, the leakage current will increase sharply, which...
Claims
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Patent Timeline
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Inventor 张朝阳殷建斐
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP