Method for pretreating solution for wet etching

Abstract

The invention provides a method for pretreating solution for wet etching. The pretreatment method is performed by dipping a plurality of blank control / dummy wafers or a plurality of control / dummy wafers with polycrystalline silicon surface layers in the solution for wet etching, wherein the solution is concentrated phosphoric acid solution, concentrated sulfuric acid solution or dilute hydrofluoric acid solution.

Description

technical field [0001] The present invention relates to a method for reducing particle defects and residue defects caused by wet etching in the semiconductor process. Specifically, the present invention relates to removing particles and residues in a chemical solution tank for wet etching in advance. Residues are a pretreatment method to reduce defects on the wafer surface. Background technique [0002] With the development of integrated circuit manufacturing technology, the requirements for the integration density and manufacturing precision of semiconductor devices are increasing. In order to reduce costs and improve integration, manufacturers are increasing the size of the chip (which has reached more than 12 inches), and continuously shrinking the key dimensions on the chip (also known as "silicon wafer", "wafer", etc.) (which has been reduced to 0.10μm or less). With the continuous shrinking of critical dimensions, impurity particles and residues attached to the wafer...

AI Technical Summary

Problems solved by technology

[0009] At present, the mainstream technologies dedicated to solving the defect problem of the wafer surface after wet etching all focus on the cleaning method and treatment after etching.

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