Method for producing optical elements displaying virtual images
A virtual image and object display technology, applied in the direction of optical components, optical, electrical components, etc., can solve time-consuming, expensive and other problems
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
example 1
[0085] Example 1. Photomask generation using calculated VI flux patterns
[0086] A bitmap file consisting of modeled or computed elemental image features is generated using the algorithm described above. The features in this file are grayscale and are first converted to binary in order to generate a lithography mask. take advantage of CS3 (from Adobe Systems) converted the bitmap to grayscale, and the image resolution was set to match the calculated resolution of the model output (5000 pixels / cm in this case). The model output uses a pixel size of 2µm (5000 pixels / cm) to help manage file size during conversion. Images were resampled to a final resolution of 10,000 pixels / cm using a bicubic smoothing algorithm. A Gaussian Blur filter with a value between 0.7-1.5 pixels can then be applied. For VIs with high complexity, use the Unsharp Mask filter routine (40%, 3-5 pixels) to produce sharper lines: set the value to 150-200 (the actual value is determined by the image com...
example 2
[0088] Example 2: Making a VI Replication Tool Using a Photomask Master
[0089] A 10 μm thick layer of SU-810 photoresist (from MicroChem, Newton, MA) was spin-coated onto a hexamethyldisilazane- (HMDS)-treated silicon wafer. Both HMDS and SU-8 were first spin-coated at 500 rpm for 5 seconds, followed by 3000 rpm for 30 seconds. The coated wafers were soft baked at 65°C for 2 minutes followed by a soft bake at 95°C for 6 minutes.
[0090] The photoresist was contacted with the photomask from Example 1 on a Quintel 7500 UV mask aligner. Make SU-8 at 21mW / cm 2 The irradiance was exposed for 6.7 seconds. The wafer was then post-exposure baked at 95°C for 2 minutes. After 45 seconds in SU-8 developer (also available from MicroChem Corporation) and deionized water rinse solution, Figure 7 The pattern shown appears on the developed wafer, which can now be used as a master replication tool.
[0091] The master tool can be nickel plated to create a hard sub-tool, or it can b...
example 3
[0092] Example 3: Manufacture of High Contrast VI Substrate
[0093] Instead of the photomask used to make the master tool in Example 2 above, which itself can be used as a replication master, reference will now be made to Figure 8A -C for description. The initial substrate 802 was a 5 mil (125 μm) thick sheet of polyester (PET) film coated with a 10 nm thick layer of titanium 804 followed by a 75 nm layer of aluminum 806 . The substrate was then coated with 1.3 μm thick MICROPOSIT by spin coating at 4000 rpm for 40 s TM S1813 photoresist (available from Rohm and Haas Electronic Materials (Philadelphia, PA)) layer 808 . As in Example 2, HMDS can also be used as an adhesion promoter. After coating, the PET substrate was soft baked at 95°C for approximately 30 minutes.
[0094] After baking, the substrate was inserted into a Quintel 7500 UV mask aligner, and the S1813 resist was brought into contact with the photomask described in Example 1. Apply photoresist at 21mW / cm...
PUM
| Property | Measurement | Unit |
|---|---|---|
| transmittivity | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More