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Residue removing liquid composition and method for cleaning semiconductor element using same

A washing method and stripping solution technology, which are used in the manufacture of semiconductor/solid-state devices, the preparation of detergent mixture compositions, and the detergent compositions, etc. Al alloy etching rate increases and other issues, to achieve the effect of improving product yield

Active Publication Date: 2011-07-27
MITSUBISHI GAS CHEM CO INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in recent years, with the miniaturization of wiring, a large amount of Ti-derived residues has been generated. Therefore, the above-mentioned composition containing a fluoride and a water-soluble organic solvent has gradually become unable to remove resist residues or Ti-derived residues.
In addition, the above-mentioned composition containing fluoride and a water-soluble organic solvent has the property of increasing the etching rate of Al alloys if it is diluted with water, and therefore has the following disadvantages: when performing chemical agent treatment-pure water rinsing, for some reason , if the water replacement of the chemical reagent is not carried out quickly, the solution diluted with water to increase the corrosion of the Al alloy will contact the substrate and corrode the Al alloy wiring part
However, a residue stripping liquid composition that has corrosion resistance to interlayer insulating film materials, wiring materials, etc., and is very excellent in stripping resist residues and Ti-derived residues has not yet been developed. Therefore, the development of the above-mentioned residue stripping is desired. liquid composition

Method used

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  • Residue removing liquid composition and method for cleaning semiconductor element using same
  • Residue removing liquid composition and method for cleaning semiconductor element using same
  • Residue removing liquid composition and method for cleaning semiconductor element using same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1、 comparative example 1～9 and 16～24

[0091] According to the compounding composition (mass %) shown in Table 1, the residue peeling liquid composition of Example 1, Comparative Examples 1-9, and 16-24 was prepared. Ammonium fluoride was used in the residue stripping liquid composition of Example 1, hydrofluoric acid was used instead of ammonium fluoride as the fluoride in Comparative Examples 1-5 and 16-20, and tetramethylammonium fluoride was used in Comparative Examples 6-8 and 21-23. ammonium fluoride. In Comparative Examples 9 and 24, no fluoride was contained. In addition, in the stripping liquid compositions of Example 1 and Comparative Examples 1 to 9, 2.00% by mass of 3-methyl-1-pentyn-3-ol was included as a compound (corrosion inhibitor) having a carbon-carbon triple bond, In Comparative Examples 16 to 24, no corrosion inhibitor was included. The reagents used here are special grade reagents.

[0092] Each of the sample wafers for evaluation shown in FIG. 1 was immersed in the residue stripping liquid...

Embodiment 2

[0094] Embodiment 2, Comparative Examples 10-12 and 25-27

[0095] According to Table 1, the residue stripping liquid compositions of Example 2, Comparative Examples 10-12, and 25-27 were prepared. The molar ratio of methanesulfonic acid / fluoride was 1.00 in the residue stripping liquid composition of Example 2, 0.75 in Comparative Examples 10 and 25, 1.69 in Comparative Examples 11 and 26, and 1.69 in Comparative Examples 12 and 27. Medium is 2.42. In addition, the residue stripping liquid compositions of Example 2 and Comparative Examples 10 to 12 contained 0.50% by mass of phenylacetylene as a compound (corrosion inhibitor) having a carbon-carbon triple bond, and Comparative Examples 25 to 27 did not contain a corrosion inhibitor. . The chemical reagents used here are special grade reagents. All the rest are carried out on the basis of Example 1, and the results are listed in Table 1.

[0096] The residue stripping liquid composition of methanesulfonic acid / fluoride (mo...

Embodiment 3～9、 comparative example 13 and 28

[0098] According to Table 1, the residue stripping liquid compositions of Examples 3-9 and Comparative Examples 13 and 28 were prepared. The residue stripping liquid compositions of Examples 3 to 9 contain water-soluble organic solvents selected from polyols, glycol ethers, and amides in the composition, and the residue stripping liquid compositions of Comparative Examples 13 and 28 do not contain specified amount of water-soluble organic solvents. In addition, Examples 3 to 7 and Comparative Example 13 contained 0.30% by mass of 3,5-dimethyl-1-hexyn-3-ol as a compound (corrosion inhibitor) having a carbon-carbon triple bond. In 8-9, 0.20 mass % of 3-methyl-1-pentyn-3-ol was contained as an anticorrosion agent, and the anticorrosion agent was not contained in the comparative example 28. The chemical reagents used here are special grade reagents. All the rest are carried out on the basis of Example 1, and the results are listed in Table 1.

[0099] As a result, the residue s...

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PUM

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Abstract

Disclosed is a residue removing liquid composition which can completely remove a resist residue and a residue derived from titanium (Ti), which remain after dry etching and ashing performed for formation of a via hole during a production process of a semiconductor substrate which has metal wiring composed of aluminum (Al) or an aluminum alloy, at a low temperature in a short time, without corroding members such as an interlayer insulating material and a wiring material. Also disclosed is a method for cleaning a semiconductor element using the residue removing liquid composition. The residue removing liquid composition contains (A) ammonium fluoride, (B) methanesulfonic acid, (C) a compound having a carbon-carbon triple bond, (D) a water-soluble organic solvent and (E) water. The contents of the components (A), (C), (D) and (E) in the residue removing liquid composition are respectively 0.005-2% by mass, 0.1-10% by mass, 60-75% by mass and 5-38% by mass, and the component (B) is contained in an amount of 0.9-1.5 times the (molar) amount of the component (A).

Description

technical field [0001] The present invention relates to a residue stripping liquid composition used in the wiring process of semiconductor elements such as ICs and LSIs, and liquid crystal panel elements, and further relates to a method for stripping resist residues and residues derived from wiring materials using the composition method. More specifically, the present invention relates to a process for dry etching suitable for forming via holes in a manufacturing process of a semiconductor substrate having metal wiring made of aluminum (Al) or an aluminum alloy containing 90% by mass or more of Al. and a composition for removing resist residues and metal residues derived from wiring materials remaining after ashing, and a composition for removing resist residues and residues derived from wiring materials using a residue stripping liquid composition cleaning method. Background technique [0002] In the manufacturing process of semiconductor devices such as ICs and LSIs, pho...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/304H01L21/027
CPCC11D7/5004C11D7/261C11D7/10H01L21/02063C11D7/34C11D7/244C11D7/5022C11D11/0047C11D7/5013H01L21/02071C11D2111/22G03F7/423H01L21/0274H01L21/304
Inventor 镰田京子田中圭一松永裕嗣
Owner MITSUBISHI GAS CHEM CO INC