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Thin film-forming sputtering device

A thin-film and sputtering technology, applied in the field of sputtering thin-film forming devices, can solve the problems of high film-forming speed and practical difficulties, and achieve the effects of improving plasma density and fast sputtering

Active Publication Date: 2011-08-03
ELECTRO-MOTIVE DIESEL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, Patent Document 2 does not aim at high-speed film formation. In fact, since the plasma diffuses radially from the vicinity of the high-frequency antenna, it is impossible to concentrate and increase the plasma density on the target surface. As a result, film formation cannot be achieved. speed too high
For this reason, although the inductively coupled sputtering device described in Patent Document 1 can be used to produce tiny objects such as silicon nanoparticles, it is practical for producing larger objects such as thin films with a thickness of micron order. have difficulties

Method used

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Examples

Experimental program
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Effect test

Embodiment 1

[0058] figure 1 (a) longitudinal sectional view and (b) plan view of the sputtered thin film forming apparatus 10 of the first embodiment (wherein, the substrate holder 14 described later is only shown in (a) and omitted in (b)) . The sputtering thin film forming device 10 has: a vacuum container 11 that can vacuum the interior by a vacuum pump (not shown), a plasma generating gas introduction unit 19 for introducing a plasma generating gas into the vacuum container, and a vacuum container installed in the vacuum container. 11 A magnetron sputtering magnet (magnetic field generating unit) 12 composed of an electromagnet on the inner wall surface of the bottom, a target holder (target holding unit) 13 provided on the upper surface of the magnetron sputtering magnet 12, a device A substrate holder (substrate holding unit) 14 facing the target holder 13 is formed. In this embodiment, the upper surface of the magnet 12 for magnetron sputtering functions as a target holder 13 . ...

Embodiment 2

[0068] Figure 4 It is (a) longitudinal sectional view and (b) plan view which show the sputtering thin film formation apparatus 20 of 2nd Example. In this embodiment, instead of the U-shaped high-frequency antenna 16 in the first embodiment, a high-frequency antenna 16A having the shape described below is used. The high-frequency antenna 16A has a shape as follows: two straight legs (first conductors) 161 extend upward from the inner wall surface of the bottom of the vacuum container 11, and extend from the two legs 161 toward the target T side. A straight arm (second conductor) 162 substantially parallel to the plate of the target T, and a straight third conductor 163 have a shape in which the tips of the two arms 162 are connected. The high-frequency antenna 16A is provided so as to protrude from the side surface of the target T in the vicinity of the surface of the target T by such a shape and arrangement. Therefore, compared with disposing the whole high-frequency anten...

Embodiment 3

[0070] Figure 5 It is a plan view showing the sputtering thin film forming apparatus 30 of the third embodiment. In the sputtering thin film forming apparatus 30 of the present embodiment, the vacuum vessel 11, the magnetron sputtering magnet 12, the target holder 13, and the substrate holder 14 are the same as those in the first and second embodiments. In the present embodiment, three radio-frequency antennas 26 are arranged along the long sides of the target T, and a total of six are arranged on each side. The high-frequency antenna 26 has the same U-shaped shape as the high-frequency antenna 16 of the first embodiment, but the length of the third conductor 263 is different for each high-frequency antenna, which is the same as that of the high-frequency antenna 16 of the first embodiment. different. Specifically, among the first high-frequency antenna 26A, the second high-frequency antenna 26B, and the third high-frequency antenna 26C arranged along the long side of the t...

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Abstract

Disclosed is a thin film-forming sputtering device capable of performing the sputtering process at a high speed. The thin film-forming sputtering device (10) is equipped with: a vacuum chamber (11); a target holder (13) provided within the vacuum chamber (11); a substrate holder (14) provided facing the target holder (13); a power source (15) that applies a voltage between the target holder (13) and the substrate holder (14); a magnet (12) for magnetron sputtering that is provided on the back side of the target holder (13) and that generates a magnetic field having a component that is parallel to a target (T), and a high-frequency antenna (16) that generates a high-frequency inductively-coupled plasma in a region in the vicinity of target (T), wherein a magnetic field that is generated by the magnet (12) for magnetron sputtering and is at or above a prescribed strength exists. By means of the high-frequency inductively-coupled plasma generated by the high-frequency antenna (16), the supply of electrons to within the magnetic field can be accelerated, and the sputtering process can be performed at a high speed.

Description

technical field [0001] The present invention relates to a sputtering thin film forming device which uses plasma to sputter a target and forms a predetermined thin film on the surface of a substrate. Background technique [0002] In the past, a parallel-plate sputtering thin-film forming apparatus in which a metal sputtering target (cathode) is arranged to face a substrate in a vacuum vessel has been widely used. In this device, by introducing an inert gas such as argon into the vacuum container, and then applying a DC voltage or a high-frequency voltage to the sputtering target, the plasma is generated in the vacuum container, and sputtering is performed by the ions in the plasma. target to form the desired thin film on the surface of the substrate. [0003] Moreover, a magnetron sputtering apparatus is mentioned as an example of the sputtering thin-film formation apparatus which can form a film at high speed (refer non-patent document 1). In the magnetron sputtering devic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/40H05H1/46
CPCH01J37/3417C23C14/358H01J37/3411H01J37/3211C23C14/3407H01J37/3408H01J37/321
Inventor 节原裕一江部明宪韩铨建
Owner ELECTRO-MOTIVE DIESEL