Semiconductor device and method for manufacturing the same

Abstract

A semiconductor device and a method for manufacturing the same. The semiconductor device includes: an integrated circuit having an electrode pad; a first insulating layer disposed on the integrated circuit; a redistribution layer including a plurality of wirings and disposed on the first insulating layer, at least one of the plurality of wirings being electrically coupled to the electrode pad; a second insulating layer having a opening on at least a portion of the plurality of wirings; a metal film disposed on the opening and on the second insulating layer, and electrically coupled to at least one of the plurality of wirings; and a solder bump the solder bump overhanging at least one of the plurality of wirings not electrically coupled to the metal film. The invention decreases detachment of the second insulating resin layer and the redistribution wire and guarantees the adhesive force of the redistribution wire.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Japanese Patent Application No. 2009-294180 filed on December 25, 2009, the entire contents of which are hereby incorporated by reference. technical field [0003] Embodiments discussed herein relate to a semiconductor device and a method of manufacturing the semiconductor device. Background technique [0004] Wafer level packaging (WLP) technology for forming redistribution wiring and terminals in a wafer state may be applied to a flip chip mounted on a semiconductor device including a plurality of protruding terminals arranged in an array. [0005] Related technologies are disclosed in, for example, Japanese Laid-Open Patent Publication Nos. 2002-198374 and 2008-135486. [0006] In order to increase the number of external connection terminals, the diameter of the second land portion 140b shown in FIG. 1 is reduced. The redistribution wiring 140 not connected to the UBM film is ...

AI Technical Summary

Problems solved by technology

However, in the process of forming the redistribution wiring 140, in the cooling operation of reflow to form the solder bump 155, the UBM film 150 may shrink, and the second insulating resin layer 132 may be pulled by the shrinkage, so The second insulating resin layer 132 is detached from the redistribution wiring 140

[0007] This reduces the reliability in the wiring portion of the semiconductor

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