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Copper electroplating method capable of reducing metal damage

A technology for electroplating copper and metal, applied in the manufacturing of circuits, electrical components, semiconductor/solid-state devices, etc., can solve the problems of poor corrosion resistance of copper, open circuit through holes, affecting the electrical performance test of wafers, etc., to reduce metal damage and improve resistance. Effects of Corrosive Properties

Inactive Publication Date: 2011-08-17
SEMICON MFG INT (SHANGHAI) CORP
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Problems solved by technology

[0008] The object of the present invention is to provide a kind of electroplating copper method that reduces metal damage, be used for depositing copper interconnection layer on wafer, to solve the poor corrosion resistance of copper obtained by existing electroplating copper process, copper is carried out in follow-up process Metal damage will occur during chemical mechanical polishing (CMP), which may cause through-hole disconnection, which will affect the electrical performance test (WAT: wafer acceptance testing) of the wafer and the yield of the chip.

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  • Copper electroplating method capable of reducing metal damage
  • Copper electroplating method capable of reducing metal damage
  • Copper electroplating method capable of reducing metal damage

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Embodiment Construction

[0029] The copper electroplating method for reducing metal damage proposed by the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in very simplified form and use imprecise ratios, which are only used for the purpose of conveniently and clearly assisting in describing the embodiments of the present invention.

[0030] The core idea of ​​the present invention is to provide a copper electroplating method for reducing metal damage, which improves the corrosion resistance of electroplated copper by increasing pulse current electroplating copper between low direct current electroplating copper and high direct current electroplating copper, Reduce the metal damage caused by chemical mechanical polishing (CMP) on copper in the subsequent process, redu...

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Abstract

The invention discloses a copper electroplating method capable of reducing metal damage. In the method, pulse current copper electroplating process is arranged between low-direct current copper electroplating and high-direct current copper electroplating additionally, so that the corrosion resistance of the electroplated copper is improved, the metal damage generated during chemically mechanical polishing (CMP) of copper in a subsequent process is reduced, the risk of through-hole disconnection is reduced, and the yield of chips is improved.

Description

technical field [0001] The invention relates to a method for manufacturing and processing a semiconductor integrated circuit, in particular to an electroplating copper method for reducing metal damage. Background technique [0002] With the continuous improvement of chip integration, copper has replaced aluminum as the mainstream interconnection technology in VLSI manufacturing. As a substitute for aluminum, copper wires can reduce interconnection impedance, reduce power consumption and cost, and improve chip integration, device density and clock frequency. [0003] Because it is very difficult to etch copper, the copper interconnection adopts a dual embedded process, also known as a dual Damascene process (Dual Damascene). The process steps of the dual Damascene process are: 1) first deposit a thin layer of silicon nitride (Si 3 N 4 ) as a diffusion barrier and etch stop layer, 2) then deposit a certain thickness of silicon oxide (SiO 2 ), 3) then photoetch micro-vias (V...

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Application Information

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IPC IPC(8): H01L21/768
Inventor 刘盛
Owner SEMICON MFG INT (SHANGHAI) CORP