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Light emitting device

A technology of light-emitting devices and light-emitting structures, which is applied in the field of lighting systems and can solve problems such as difficulty in obtaining the best amount of light

Active Publication Date: 2011-08-24
SUZHOU LEKIN SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When a single passivation layer with the same refractive index is arranged on the side surface and top surface of the light emitting device, it is difficult to obtain the optimum light quantity

Method used

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Experimental program
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Embodiment Construction

[0023] Hereinafter, a light emitting device, a light emitting device package, and a lighting system according to embodiments will be described with reference to the accompanying drawings.

[0024] In the description of embodiments, it will be understood that when a layer (or film) is referred to as being "on" another layer or substrate, it can be directly on another layer or substrate, or it can also be directly on another layer or substrate. There is an intermediate layer. Further, it will be understood that when a layer is referred to as being "under" another layer, it can be directly under another layer, and one or more intervening layers may also be present. In addition, it will also be understood that when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present.

[0025] (Example)

[0026] figure 1 is a sectional view of the light emitting device according to the first ...

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PUM

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Abstract

Provided is a light emitting device. The light emitting device includes a light emitting structure comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, and a passivation layer protecting a surface of the light emitting structure. The passivation layer includes a first passivation layer on a top surface of the light emitting structure and a second passivation layer having a refractive index different from that of the first passivation layer, the second passivation layer being disposed on a side surface of the light emitting structure. The second passivation layer has a refractive index greater than that of the first passivation layer.

Description

technical field [0001] The present invention relates to a light emitting device, a light emitting device package, and a lighting system. Background technique [0002] In a light emitting device, a P-N junction diode having the property of converting electrical energy into light energy can be formed by combining Group III and V elements on the periodic table. Light-emitting devices can realize various colors by controlling the composition ratio of compound semiconductors. [0003] Nitride semiconductors have attracted much attention for the fields of optical devices and high power electronics due to their high thermal stability and wide bandgap energy. In particular, blue light emitting devices, green light emitting devices, and UV light emitting devices using nitride semiconductors have been commercialized and widely used. [0004] According to the related art, a passivation layer is arranged on the side surface of the light emitting device. When a single passivation laye...

Claims

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Application Information

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IPC IPC(8): H01L33/44H01L33/00
CPCH01L33/22H01L33/44H01L2224/48091H01L2924/12032H01L2924/00014H01L2924/00F21V3/049F21V3/02F21Y2115/10
Inventor 金鲜京
Owner SUZHOU LEKIN SEMICON CO LTD