Vapor phase epitaxy device and vapor phase epitaxy method

Abstract

The invention discloses a vapor phase epitaxy device and a vapor phase epitaxy method. The disclosed vapor phase epitaxy device comprises a reaction chamber, a plurality of reaction gas spraying heads arranged in the reaction chamber, a plurality of trays corresponding to the plurality of reaction gas spraying heads, and a power shaft driving the trays, wherein the power shaft comprises revolution shafts and a plurality of rotation shafts, the rotation shafts correspond to the trays one by one; and the trays are respectively connected with the corresponding rotation shafts, or connected with the revolution shafts and the corresponding rotation shafts alternatively. By utilizing the vapor phase epitaxy device and the vapor phase epitaxy method, the flow instability in the chemical vapor phase epitaxy can be reduced effectively, the spurious response times can be decreased, also the problem of the thickness of a quantum well can be solved effectively, different selections can be provided for the growing process of different heterogenous junctions, and the quality of semiconductor elements can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor production, in particular to a vapor phase epitaxy device and a vapor phase epitaxy method. Background technique [0002] Chemical vapor phase epitaxy (CVD or VPE) technology is widely used in the preparation of various semiconductor thin-film devices, including microelectronic chips, light-emitting diodes (LEDs), and solar photovoltaic cells. The basic process of chemical vapor phase epitaxy is that the source gas is introduced into the reactor from the gas source, and the gas particles reach the surface of the substrate through transport (convection and diffusion), and a chemical reaction occurs on the high-temperature substrate due to thermal excitation, so that on the wafer Deposit monocrystalline or polycrystalline thin films. [0003] In the preparation of chemical vapor phase epitaxy thin films, one of the main difficulties is how to achieve the uniformity of film thickness and compo...

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Problems solved by technology

The main problem of this method is that as the points on the tray gradually move away from the center of rotation, the linear speed gradually increases, and the sector area of ​​the outer circle part is also much larger than that of the inner circle part, so that the wafers near the outer edge of the tray are larger than those near the center. The wafer is exposed to more reactive gas (or the residence time of the reactive gas becomes longer), resulting in whether it is CVD or ALD growth, the reaction concentration is strongly affected by the rotation speed and the distance from the center of rotation, and unevenness occurs from the center to the edge

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