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Method for treating on Si-BARC

A bottom anti-reflection and coating technology, which is applied in the direction of photoplate-making process coating equipment, electrical components, electric solid devices, etc., can solve problems such as glue eating, achieve the effect of eliminating necking and improving the roughness of line edges

Active Publication Date: 2011-09-21
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, under such conditions, it will still cause a certain phenomenon of "eating glue"

Method used

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  • Method for treating on Si-BARC
  • Method for treating on Si-BARC
  • Method for treating on Si-BARC

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Embodiment Construction

[0029] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, some technical features known in the art are not described in order to avoid confusion with the present invention.

[0030] In order to thoroughly understand the present invention, detailed steps will be proposed in the following descriptions to illustrate how the present invention processes the silicon-containing bottom anti-reflective coating to effectively prevent the quencher in the photoresist from entering the Si- BARC to solve the "necking" phenomenon that occurs after photoresist development. Obviously, the practice of the invention is not limited to specific details familiar to those skilled in the semiconductor arts. Preferred embodiments of the present invention a...

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Abstract

The invention discloses a method for treating on Si-BARC. The method includes the following steps: performing a plasma treatment on a surface of the Si-BARC so as to form an interfacial layer, wherein the surface is the one contacts with photoresist; before the plasma treatment, coating a layer of BARC or multilayer of BARC on a front device layer; coating Si-BARC on an uppermost BARC. By using the method of the invention, necking phenomenon of the photoresist can be eliminated and line edge roughness can be improved.

Description

technical field [0001] The present invention relates to semiconductor manufacturing processes, and more particularly to a method of treating silicon-containing bottom anti-reflective coatings. Background technique [0002] With the continuous development of integrated circuits, the minimum line width of transistors continues to shrink. First, the lines defined by the photolithography process are required to be narrower and narrower. Of course, the requirements for the etching process are also getting higher and higher. In order to meet the requirements of lithography, in addition to the continuous upgrading of lithography equipment, people also use other technologies to improve the quality and precision of lithography, and the use of anti-reflective coating (ARC) is one of them. The function of ARC is to prevent the reflection of light at the substrate interface after passing through the photoresist. This is because the reflected light returning to the photoresist will inter...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/16H01L27/02
Inventor 尹晓明安辉
Owner SEMICON MFG INT (SHANGHAI) CORP