Cathode structure for field emission display

Abstract

The invention provides a cathode structure for a field emission display, which comprises a substrate, a cathode layer, a resistance layer, an interlayer dielectric layer and a field emission tip, wherein the cathode layer is positioned on the substrate; the resistance layer is positioned on the cathode layer and is made of amorphous silicon (a-Si); the interlayer dielectric layer is positioned on the resistance layer and is provided with a first opening exposing partial upper surface of the resistance layer; and the field emission tip is positioned on the partial upper surface of the resistance layer in the first opening and is electrically connected with the partial upper surface of the resistance layer, wherein the resistance layer is formed through chemical vapor deposition (CVD). The cathode structure has the advantages that: 1) the cost is reduced; 2) instability of particles on the resistance layer is improved; 3) a stable impedance value is obtained; and 4) the capacity is improved.

Description

technical field [0001] The present invention relates to a field emission display, and in particular to a cathode structure of a field emission display. Background technique [0002] A field emission display (Field Emission Display, FED) is a new type of flat panel display. The display uses field emitters as the electron source. If a strong electric field is applied to the field emitter, due to the tunnel effect, electrons can escape from the emitter to vacuum, resulting in field emission. The electrons emitted from the electron source are focused and bombarded to the phosphor, which excites the phosphor to emit light and realize image display. Since the image display mechanism of the field emission display device is very close to that of a traditional cathode ray tube (Cathode Ray Tube), the field emission display device can achieve the same image display quality as a CRT. [0003] The structure of the existing field emission display generally includes an anode and a cath...

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Problems solved by technology

[0003] The structure of the existing field emission display generally includes an anode and a cathode. Wherein, for the cathode structure, a resistance layer is generally included, and for the resistance layer, the material generally adopts silicon carbide (SiC), and the resistance layer is made by carbonizing the raw material. The silicon target is formed by physical vapor deposition (Physical Vapor Deposition, PVD). However, the silicon carbide target is used to form the resistance layer, and its impedance value is difficult to control, and the PVD method is used, due to the power and carrier transmission of the PVD machine. The speed limit affects the production capacity. In addition, the use of silicon carbide targets will increase the cost. Furthermore, the silicon carbide target particles are very unstable

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