Process for preparing ingot for semiconductor target by using distribution device

Abstract

The invention discloses a process for preparing an ingot for a semiconductor target by using a distribution device. The process comprises the following steps of: providing parent metal, and placing the parent metal in a vacuum smelting furnace; melting the parent metal in the vacuum smelting furnace; sampling the molten metal and analyzing a product; injecting the molten metal which is subjected to product analysis and meets the product requirement into a plurality of vertical crystallizers by a pouring gate and a distributor, wherein the distributor comprises an inlet and a plurality of outlets, and the plurality of outlets of the distributor correspond to the plurality of vertical crystallizers respectively; and performing continuous casting on the molten metal to form a target casting. By the process for preparing the ingot for the semiconductor target by using the distribution device, the quality of the casting is improved, and the production efficiency of the target casting is greatly improved.

Description

technical field [0001] The invention relates to the field of casting, in particular to a process for preparing an ingot for a semiconductor target with a distribution device. Background technique [0002] Ingots for semiconductor targets are materials used as targets. For example, in the process of pulse laser deposition or electron beam deposition to form thin films, the quality of ingots for semiconductor targets plays a key role in the quality of deposited films. [0003] There are many kinds of ultra-high-purity aluminum used for semiconductor targets. The common materials are pure aluminum, aluminum-copper alloy, aluminum-silicon-copper alloy, aluminum-silicon alloy and other materials. Although the alloy composition content is different, the requirements for purity and solid impurities are very high High, half of the purity requirement shall not be lower than 99.999%, and the presence of solid impurities is not allowed. [0004] The preparation process of ultra-high-p...

AI Technical Summary

Problems solved by technology

The existing technology has relatively high requirements for the skill control of operators, and the casting process is relatively long, and the quality of aluminum ingots is relatively poor. The purity of aluminum ingots is generally only about 99.8%, which affects the yield of semiconductor targets.

And batch production requires a large number of ingots. The production efficiency of ultra-high-purity aluminum prepared in this way is low, the production cycle is long, and the energy consumption is relatively high.

[0005] The Chinese patent with the publication number "CN101704076A" discloses a "preparation method of ingot for target production". Limited and does not improve the production efficiency of ingots for the production of semiconductor targets

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