NVM (nonvolatile memory) and manufacturing method thereof

Abstract

The invention relates to an NVM (nonvolatile memory) and a manufacturing method thereof. The NVM comprises a substrate, two construction units, coupled conductive media, tunnel media and a control grid, wherein the two construction units are separated and parts of the two construction units are embedded into the substrate; each construction unit comprises the coupling media, a floating gate, spacer media, support media and a side wall in sequence; the coupling media and the floating gate are embedded into the substrate; the coupled conductive media are filled in the space between the two separated construction units; the coupling media, the spacer media and the side wall surround the floating gate; the floating gate and the coupled conductive media are separated; the tunnel media are arranged on the substrate surfaces outside the construction units; and the control grid is arranged on the tunnel media and separated from the floating gate. The NVM is simple in structure, convenient to manufacture and beneficial to reducing the sizes of memory cells.

Description

technical field [0001] The invention relates to a nonvolatile memory and a manufacturing method thereof, in particular to a nonvolatile memory of a sub-gate type buried floating gate and a manufacturing method thereof. Background technique [0002] Non-volatile memory (Non-Volatile Memory, NVM) is a memory unit with a MOS transistor structure. Because it has the characteristics of storing, reading, and erasing data multiple times, and the stored data is interrupted Electricity will not disappear afterwards, so it is widely used in personal computers and electronic equipment. However, with the gradual development of miniaturization of semiconductor components, the size of the memory is also reduced along with the reduction of the line width, and the coupling ratio of the source to the floating gate in the non-volatile memory is greatly reduced. [0003] Generally, a nonvolatile memory generally includes a source region, a drain region, a channel region, a control gate and a ...

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Problems solved by technology

[0005] As the size of the non-volatile memory becomes smaller, the size of the floating gate also becomes smaller. When other conditions remain unchanged, the coupling area of ​​the source to the floating gate decreases, thereby affecting the non-volatile memory cell. The ability to program nonvolatile memory cells results in degraded

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