High voltage semiconductor transistor and method of manufacturing same

Abstract

The invention relates to a high voltage semiconductor transistor and a method of manufacturing the same. The transistor includes a semiconductor substrate, a gate strucutre formed on the semiconductor substrate, a source and a drain formed in the substrate on either side of the gate structure, a first doped well formed in the substrate, and a second doped well formed in the first well. One portion of the second well surrounds the source and the other portion of the second well extends laterally from the first portion in the first well. Through arranging a double-well structure in the semiconductor substrate (an extending p-type well area is located in an n-type well area), the BV value is increased and the transistor performance is enhanced. Additionally, the arrangement of the p-type doped extending area reduces the conductive resistance Ron in operation of the transistor so as to save the power cost of the transistor.

Description

technical field [0001] The present invention relates to a semiconductor technology, in particular to a high voltage (High Voltage; HV) semiconductor transistor and a manufacturing method thereof. Background technique [0002] Technological advances in semiconductor integrated circuit (Integrated Circuit; IC) materials, design, process, and manufacturing have resulted in continued shrinking of IC devices, with each generation having smaller and more complex circuits than the previous generation. [0003] When semiconductor circuits composed of Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) are used in HV applications, such as HV Lateral Diffusion Metal-Oxide-Semiconductor Devices (HV Lateral DiffusionMetal-Oxide-Semiconductor Devices; HV LDMOSs) devices, as dimensions continue to advance with advanced technology, issues related to degraded voltage performance arise. In order to prevent the punch-through between the source and the drain, or to reduce the resista...

AI Technical Summary

Problems solved by technology

[0008] The purpose of the present invention is to overcome the defects of the existing high-voltage semiconductor transistor and its manufacturing method, and provide a new high-voltage semiconductor transistor and its manufacturing method. The technical problem to be solved is to make this high-voltage semiconductor transistor have a high BV critical value, but still maintain low power consumption, very suitable for practical

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