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High voltage semiconductor transistor and method of manufacturing same

A semiconductor and transistor technology, applied in the field of semiconductors

Active Publication Date: 2014-04-23
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The purpose of the present invention is to overcome the defects of the existing high-voltage semiconductor transistor and its manufacturing method, and provide a new high-voltage semiconductor transistor and its manufacturing method. The technical problem to be solved is to make this high-voltage semiconductor transistor have a high BV critical value, but still maintain low power consumption, very suitable for practical

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  • High voltage semiconductor transistor and method of manufacturing same
  • High voltage semiconductor transistor and method of manufacturing same
  • High voltage semiconductor transistor and method of manufacturing same

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Embodiment Construction

[0056] In order to further explain the technical means and effects of the present invention to achieve the intended purpose of the invention, the specific implementation, structure and method of the high-voltage semiconductor transistor and its manufacturing method proposed according to the present invention will be described below in conjunction with the accompanying drawings and preferred embodiments. , steps, features and effects thereof are described in detail below.

[0057] Some embodiments of the present invention will be described in detail as follows. However, in addition to the following descriptions, the present invention can also be widely implemented in other embodiments, and the protection scope of the present invention is not limited by the embodiments, which shall prevail by the protection scope of the claims. Moreover, in order to provide a clearer description and an easier understanding of the present invention, various parts in the drawings have not been dra...

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Abstract

A high voltage metal-oxide-semiconductor laterally diffused device (HV LDMOS) and a method of making it are provided in this disclosure. The device includes a semiconductor substrate, a gate structure formed on the substrate, a source and a drain formed in the substrate on either side of the gate structure, a first doped well formed in the substrate, and a second doped well formed in the first well. One portion of the second well surrounds the source and the other portion of the second well extends laterally from the first portion in the first well.

Description

technical field [0001] The present invention relates to a semiconductor technology, in particular to a high voltage (High Voltage; HV) semiconductor transistor and a manufacturing method thereof. Background technique [0002] Technological advances in semiconductor integrated circuit (Integrated Circuit; IC) materials, design, process, and manufacturing have resulted in continued shrinking of IC devices, with each generation having smaller and more complex circuits than the previous generation. [0003] When semiconductor circuits composed of Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) are used in HV applications, such as HV Lateral Diffusion Metal-Oxide-Semiconductor Devices (HV Lateral DiffusionMetal-Oxide-Semiconductor Devices; HV LDMOSs) devices, as dimensions continue to advance with advanced technology, issues related to degraded voltage performance arise. In order to prevent the punch-through between the source and the drain, or to reduce the resista...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/06H01L21/336
CPCH01L29/66659H01L29/7816H01L29/66681H01L29/42368H01L29/1095H01L29/7835H01L29/0634
Inventor 苏如意杨富智蔡俊琳霍克孝沈佳青黄柏晟郑志昌柳瑞兴段孝勤
Owner TAIWAN SEMICON MFG CO LTD
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