Press-pack module with power overlay interconnection

Abstract

Systems and methods for utilizing power overlay (POL) technology and semiconductor press-pack technology to produce semiconductor packages (50, 70, 78, 80, 90, 100, 110, 120) with higher reliability and power density are provided. A POL structure (40) may interconnect semiconductor devices (48) within a semiconductor package (50, 70, 78, 80, 90, 100, 110, 120), and certain embodiments may be implemented to reduce the probability of damaging the semiconductor devices (48) during the pressing of the conductive plates (58, 60). In one embodiment, springs (54) and / or spacers (56) may be used to reduce or control the force applied by an emitter plate (58) onto the semiconductor devices (48) in the package (50, 70, 78, 80, 90, 100, 110, 120). In another embodiment, the emitter plate (58) may be recessed to exert force on the POL structure (40), rather than directly against the semiconductor devices (48). Further, in some embodiments, the conductive layer (42) of the POL structure (40) may be grown to function as an emitter plate (58), and regions of the conductive layer (40) may be made porous to provide compliance.

Description

technical field [0001] The subject matter disclosed herein relates to electronic devices, and more particularly to press-packed semiconductor modules using electrical overlay interconnects. Background technique [0002] In various power electronic systems, press-packed semiconductor packages can be used to control the distribution of power to various applications and devices of the power electronic system. A press-pack semiconductor package may generally include a number of semiconductor chips that function as current switches for relatively high voltage ranges. The semiconductors used in this package have certain limitations, such as maximum breakdown voltage and current carrying capability. Due to the blocking voltage limitation of each individual semiconductor, several semiconductors can be connected in series to obtain the required voltage and function in higher power systems. For example, insulated gate bipolar transistors (IGBTs) may have a relatively low breakdown v...

AI Technical Summary

Problems solved by technology

However, in the complex design of commercial semiconductor packages, and with the small size of existing semiconductor chips, typical springs may not be sufficient for accurate alignment with the semiconductor chips in the package

Images