System of two connection partners with low-temperature pressure sintered connection and method for its manufacture
A technology of pressure sintering and low temperature, which is applied in the field of system manufacturing to achieve the effect of simple process flow and cost saving
Active Publication Date: 2011-11-30
SEMIKRON ELECTRONICS GMBH & CO KG
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Problems solved by technology
[0005] This is disadvantageous since a large number of connection partners consist of non-precious metals or other non-metallic materials
Method used
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[0022] Fig. 1 shows each step according to the manufacturing method of the present invention, and Figure 1e A first system according to the invention is shown in , which is formed from a substrate 10 and a power semiconductor component 50 .
[0023] Figure 1a A schematic diagram of a typical substrate 10 as used in the field of power electronics is shown. The substrate 10 consists of an insulating material body 12 , preferably of technical ceramics such as aluminum nitride, and a plurality of metal conductor tracks 14 are provided on at least one main surface of the insulating material body 12 . These metal conductor tracks 14 are preferably composed of a non-noble metal, for example copper, and are electrically insulated from one another in order to form the circuit structure on the substrate 10 .
[0024] Generally, the surface of the conductor strip 14 has a copper oxide layer 20 formed mainly through an oxidation process of copper and oxygen in the air. Such oxide-cont...
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System of two connection partners with a low-temperature pressure sintered connection, the connection partners being joined together in a material fit by means of a low-temperature pressure sintered connection, the connection partners having a contact with a further connection partner as part of a surface segment, and method for producing the same Between the contact surfaces, a noble metal-containing connecting agent is arranged, at least one surface section of the connection partner consists of a non-noble metal, which has a metal oxide layer in the area adjacent to the contact surfaces, the contact surfaces themselves are metallic and do not have metal The oxide layer is thus in direct contact with the linking agent. Method steps: preparing a first connection partner with a non-noble metal surface section, the surface section having a planar metal oxide layer; applying a reducing agent to the region of the surface section provided as the first contact surface of the first connection partner superior. A layer of sinter paste is applied onto the reducing agent. The second contact surface of the second connection partner is arranged on the layer of sintering paste. The system is heated and pressurized to construct a low temperature pressure sintered joint of the material fit.
Description
technical field [0001] The invention describes a system of two connection partners connected by means of low-temperature pressure sintering and a method for producing such a system. technical background [0002] Such systems are sufficiently known, for example, from the field of power electronics. There, for example, the power semiconductor component is bonded to the substrate in a material fit and arranged in the power semiconductor module. [0003] DE 10 2005 058 794 A1, for example, describes a system for a cyclical method of forming such connections, in which the extrusion system for cyclic operation has an extrusion punch and a heatable extrusion table, and in which , the conveyor belt, which is stable under pressure, is arranged in such a way that it runs directly above the extrusion table. Furthermore, a protective foil is arranged between the substrate with the components arranged thereon and the extrusion punch. [0004] According to the prior art, however, as di...
Claims
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IPC IPC(8): H01L23/00H01L23/492H01L21/603
CPCH01L2924/01013H01L24/29H01L2924/01005H01L2924/01033H01L24/27H05K3/32H01L25/072H01L2924/01047H01L24/05H01L2224/29101H01L24/83H01L2924/014H01L2224/83192H01L2924/01327H01L2224/8384H01L2924/01029H01L24/33H01L2924/01006H01L23/36H01L2224/29339H01L24/32H01L2924/01019H01L23/3735H01L2924/01068H01L2224/29006H01L2924/00
Inventor 乌尔里希·扎格鲍姆约恩·格罗斯曼
Owner SEMIKRON ELECTRONICS GMBH & CO KG