Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

short circuit thyristor

A technology of thyristor and conduction type, which is applied in the field of short-circuit thyristors, and can solve the problems of reducing the turning voltage, the influence and difficulties of the characteristics of thyristor holding current, etc.

Active Publication Date: 2011-11-30
SHINDENGEN ELECTRIC MFG CO LTD
View PDF9 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, changing the impurity concentration in the N1 region will affect the holding current characteristics of the thyristor
Therefore, it is difficult to reduce the breakover voltage while maintaining the holding current characteristics by changing the impurity concentration of the N1 region
In this way, in Figure 4 In the conventional short-circuit thyristor shown above, it is very difficult to lower the transition voltage to the ON state without affecting the holding current characteristics.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • short circuit thyristor
  • short circuit thyristor
  • short circuit thyristor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0027] Hereinafter, a short-circuit thyristor according to Embodiment 1 of the present invention will be described with reference to the drawings.

[0028] figure 1 It is a cross-sectional structural view showing the short-circuited thyristor 100 according to the first embodiment.

[0029] exist figure 1 Among them, the short-circuit thyristor 100 has a P region (1, 3, 5), an N region (2, 4), a channel stopper (channel stopper) (6-9), electrodes (11, 12), an insulating layer (21-24), P++ area (31, 32), and N++ area (41, 42).

[0030] The P region 3 is a p-type semiconductor region of the first conductivity type and constitutes a semiconductor substrate of the main body layer of the short-circuit thyristor 100 . Here, will figure 1 The upper side of the semiconductor substrate is the first surface F1, and the lower side of the semiconductor substrate is the second surface F2.

[0031] The N region 2 is an n-type semiconductor region of the second conductivity type. N r...

Embodiment approach 2

[0062] Next, a short-circuit thyristor according to Embodiment 2 of the present invention will be described with reference to the drawings.

[0063] figure 2 It is a cross-sectional structural view showing a short-circuited thyristor 100a according to the second embodiment.

[0064] exist figure 2 Among them, the short-circuit thyristor 100a has P regions (1, 3, 5), N regions (2, 4), channel stop rings (6-9), electrodes (11, 12), insulating layers (21-24 ), P++ regions (31a, 32a), and N++ regions (41a, 42a). exist figure 2 in, for with figure 1 Identical structures are marked with the same symbols.

[0065] The P++ region 31 a is formed in contact with the P region 3 under the insulating layer 21 and is a p-type semiconductor region having a higher impurity concentration than the P region 3 . In addition, the P++ region 31 a is formed in the portion of the junction J2 below the P region 1 .

[0066]The P++ region 32 a is formed in contact with the P region 3 above t...

Embodiment approach 3

[0084] Hereinafter, a three-short-circuit thyristor according to an embodiment of the present invention will be described with reference to the accompanying drawings.

[0085] image 3 It is a cross-sectional structure diagram showing the short-circuited thyristor 100b of the third embodiment.

[0086] exist image 3 Among them, the short-circuit thyristor 100b has P regions (1a, 1b, 3), N regions (2a, 2b, 4), channel stop rings (6-9), electrodes (11a, 12a), insulating layers (22a , 22b, 25), P++ region 31b, and N++ region (41b, 42b). exist image 3 in, for with figure 1 Identical structures are marked with the same symbols.

[0087] The P regions 1a and 1b are p-type semiconductor regions and are formed in a state exposed on the first surface F1.

[0088] N region 2 a is an n-type semiconductor region and is formed between P region 1 a and P region 3 . In addition, a part of the N region 2a is in contact with the first surface F1.

[0089] N region 2 b is an n-type s...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a short circuiting thyristor 100. A first area (P area 1), a second area (N area 2), a third area (P area 3) and a fourth area (N area 4) are jointed successively. And an electrode 11 is arranged to make the first area (P area 1) and a second area (N area 2) to be short-circuit, so as to form a fifth area (P++ area 31) having a higher impurity concentration than the third area (P area 3) and connecting with the third area (P area 3), and a sixth area (N++ area 41) having a higher impurity concentration than the second area (N area 2) and connecting with the second area (N area 2) and the fifth area (P++ area 31). And a turning voltage value is set according to the impurity concentration of the fifth area (P++ area 31) and the sixth area (N++ area 41).

Description

technical field [0001] The invention relates to a short-circuit thyristor. Background technique [0002] Conventionally, in a PNPN thyristor, a short-circuit gate that reduces the breakover voltage (breakover voltage), which is the withstand voltage at transition to the ON state, has been disclosed by providing a region with a lower junction withstand voltage than other parts at the junction. Flow transistors (for example, refer to Patent Document 1 to Patent Document 4). [0003] exist Figure 4 In the conventional short-circuited thyristor shown, when a bias voltage is applied from the terminal T1 to the terminal T2, a reverse voltage is applied to the junction J2. Therefore, the region of the high-concentration impurity layer P++ whose junction breakdown voltage is lower than that of the junction portion J2 will be de-energized first. As a result, current flows concentratedly in this P++ region. If this current increases, a voltage drop occurs in the N1 region below th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L29/36H01L29/74
CPCH01L29/87
Inventor 大竹仁志柴田行裕
Owner SHINDENGEN ELECTRIC MFG CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com