short circuit thyristor

A technology of thyristor and conduction type, which is applied in the field of short-circuit thyristors, and can solve the problems of reducing the turning voltage, the influence and difficulties of the characteristics of thyristor holding current, etc.

Active Publication Date: 2011-11-30
SHINDENGEN ELECTRIC MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, changing the impurity concentration in the N1 region will affect the holding current characteristics of the thyristor
Therefore, it is difficult to reduce the breakover voltage while maintaining the holding current characteristics by changing

Method used

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Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0027] Hereinafter, a short-circuit thyristor according to Embodiment 1 of the present invention will be described with reference to the drawings.

[0028] figure 1 It is a cross-sectional structural view showing the short-circuited thyristor 100 according to the first embodiment.

[0029] exist figure 1 Among them, the short-circuit thyristor 100 has a P region (1, 3, 5), an N region (2, 4), a channel stopper (channel stopper) (6-9), electrodes (11, 12), an insulating layer (21-24), P++ area (31, 32), and N++ area (41, 42).

[0030] The P region 3 is a p-type semiconductor region of the first conductivity type and constitutes a semiconductor substrate of the main body layer of the short-circuit thyristor 100 . Here, will figure 1 The upper side of the semiconductor substrate is the first surface F1, and the lower side of the semiconductor substrate is the second surface F2.

[0031] The N region 2 is an n-type semiconductor region of the second conductivity type. N r...

Embodiment approach 2

[0062] Next, a short-circuit thyristor according to Embodiment 2 of the present invention will be described with reference to the drawings.

[0063] figure 2 It is a cross-sectional structural view showing a short-circuited thyristor 100a according to the second embodiment.

[0064] exist figure 2 Among them, the short-circuit thyristor 100a has P regions (1, 3, 5), N regions (2, 4), channel stop rings (6-9), electrodes (11, 12), insulating layers (21-24 ), P++ regions (31a, 32a), and N++ regions (41a, 42a). exist figure 2 in, for with figure 1 Identical structures are marked with the same symbols.

[0065] The P++ region 31 a is formed in contact with the P region 3 under the insulating layer 21 and is a p-type semiconductor region having a higher impurity concentration than the P region 3 . In addition, the P++ region 31 a is formed in the portion of the junction J2 below the P region 1 .

[0066]The P++ region 32 a is formed in contact with the P region 3 above t...

Embodiment approach 3

[0084] Hereinafter, a three-short-circuit thyristor according to an embodiment of the present invention will be described with reference to the accompanying drawings.

[0085] image 3 It is a cross-sectional structure diagram showing the short-circuited thyristor 100b of the third embodiment.

[0086] exist image 3 Among them, the short-circuit thyristor 100b has P regions (1a, 1b, 3), N regions (2a, 2b, 4), channel stop rings (6-9), electrodes (11a, 12a), insulating layers (22a , 22b, 25), P++ region 31b, and N++ region (41b, 42b). exist image 3 in, for with figure 1 Identical structures are marked with the same symbols.

[0087] The P regions 1a and 1b are p-type semiconductor regions and are formed in a state exposed on the first surface F1.

[0088] N region 2 a is an n-type semiconductor region and is formed between P region 1 a and P region 3 . In addition, a part of the N region 2a is in contact with the first surface F1.

[0089] N region 2 b is an n-type s...

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Abstract

The invention provides a short circuiting thyristor 100. A first area (P area 1), a second area (N area 2), a third area (P area 3) and a fourth area (N area 4) are jointed successively. And an electrode 11 is arranged to make the first area (P area 1) and a second area (N area 2) to be short-circuit, so as to form a fifth area (P++ area 31) having a higher impurity concentration than the third area (P area 3) and connecting with the third area (P area 3), and a sixth area (N++ area 41) having a higher impurity concentration than the second area (N area 2) and connecting with the second area (N area 2) and the fifth area (P++ area 31). And a turning voltage value is set according to the impurity concentration of the fifth area (P++ area 31) and the sixth area (N++ area 41).

Description

technical field [0001] The invention relates to a short-circuit thyristor. Background technique [0002] Conventionally, in a PNPN thyristor, a short-circuit gate that reduces the breakover voltage (breakover voltage), which is the withstand voltage at transition to the ON state, has been disclosed by providing a region with a lower junction withstand voltage than other parts at the junction. Flow transistors (for example, refer to Patent Document 1 to Patent Document 4). [0003] exist Figure 4 In the conventional short-circuited thyristor shown, when a bias voltage is applied from the terminal T1 to the terminal T2, a reverse voltage is applied to the junction J2. Therefore, the region of the high-concentration impurity layer P++ whose junction breakdown voltage is lower than that of the junction portion J2 will be de-energized first. As a result, current flows concentratedly in this P++ region. If this current increases, a voltage drop occurs in the N1 region below th...

Claims

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Application Information

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IPC IPC(8): H01L29/36H01L29/74
CPCH01L29/87
Inventor 大竹仁志柴田行裕
Owner SHINDENGEN ELECTRIC MFG CO LTD
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