high quality semiconductor material
A semiconductor, hydrogen content technology, used in semiconductor devices, sustainable manufacturing/processing, climate sustainability, etc., that can solve problems such as semiconductor layer degradation, difficult control of deposition processes, polymerization and powder formation, and plasma instability.
Inactive Publication Date: 2011-12-07
UNITED SOLAR OVONIC
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Problems solved by technology
Also, the requirement to maintain a high substrate temperature can complicate the process and cause degradation problems of previously deposited semiconductor layers
Additionally, higher process gas pressures can lead to polymerization and powder formation as well as plasma instability, which makes the deposition process more difficult to control
As a consequence of the foregoing, VHF-induced deposition has limited utility in the commercial scale fabrication of large area semiconductor devices, especially silicon alloy semiconductor materials, and most especially silicon germanium alloy semiconductor materials
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[0023]A first aspect of the invention relates to plasma deposition methods for the preparation of thin film materials such as semiconductor materials, and a second aspect relates to particularly high quality semiconductor materials which can, but need not, be produced by this method. In the method of the invention, the plasma is generated by very high frequency (VHF) electromagnetic energy, which may be understood to mean that the electromagnetic energy has a frequency in the range of 30-150 MHz, and in special cases, in the range of 40-120 MHz Frequency of. The methods of the present invention will be described primarily with respect to methods of making thin film semiconductor materials comprising hydrogenated silicon and / or germanium alloys. These materials can include nanocrystalline (about 100-500 Angstroms) and amorphous (less than about 100 Angstroms) structures and are commonly used in the fabrication of photovoltaic devices, photoconductive devices such as electrophot...
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A hydrogenated, silicon based semiconductor alloy has a defect density of less than 1016 cm−3. The alloy may comprise a hydrogenated silicon alloy or a hydrogenated silicon-germanium alloy. Hydrogen content of the alloy is generally less than 15%, and in some instances less than 11%. The tandem photovoltaic devices which incorporate the alloy exhibit low levels of photo degradation. In some instances, the material is fabricated by a high speed VHF deposition process.
Description
[0001] Citing related applications [0002] This application claims priority to US Patent Application Serial No. 12 / 266,957, filed November 7, 2008, the contents of which are incorporated herein by reference. [0003] Statement of Government Interest [0004] This invention was made, at least in part, under United States Government Department of Energy Affiliation No. DE-FC36-07G017053. The government may have rights in this invention. field of invention [0005] The present invention generally relates to thin film materials such as thin film semiconductor materials. More specifically, the present invention relates to hydrogenated silicon-based semiconductor materials having high quality electrical and material properties. Background of the invention [0006] The performance characteristics of electronic devices such as photovoltaic devices are largely dependent on the electrical and material properties of the semiconductor materials incorporated into the device. Perform...
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IPC IPC(8): H01L31/042
CPCH01L31/03765H01L31/075H01L31/03767Y02E10/547H01L31/03762H01L31/204H01L31/1812H01L31/076H01L31/202H01L31/0284H01L31/1804Y02E10/548Y02P70/50H01L31/04
Inventor X·徐S·古哈C·杨D·A·贝格罗S·琼斯Y·李B·杨G·岳
Owner UNITED SOLAR OVONIC