Transistor power device capable of performing overvoltage protection on gate source and gate drain and method for making transistor power device

Abstract

The invention discloses a transistor power device capable of performing overvoltage protection on a gate source and a gate drain. The transistor power device comprises a silicon wafer, a gate oxide layer, a polysilicon layer, a gate electrode, a source electrode, a drain electrode, a P+ region and an N+ region, wherein the P+ region and the N+ region are respectively arranged on a source region of the source electrode. The transistor power device has a good effect of protecting all electrodes, has an overvoltage protection function and long service life, and is simple in structure and easy to make. Moreover, a gate region is difficult to be damaged.

Description

technical field [0001] The invention relates to semiconductor technology, in particular to a gate-source and gate-drain overvoltage-protected transistor power device and a manufacturing method thereof. Background technique [0002] In the existing technology, the existing power devices, such as VDMOS (Vertical Double Diffused Metal-Oxide Semiconductor Field Effect Transistor) and IGBT (Insulated Gate Bipolar Transistor), one gate voltage control, two kinds of carrier Adding conductive devices, it has the advantages of simple driving circuit, large current capacity, and easy integration. The area of ​​the gate electrode occupies more than half of its total area, and the gate region is easily damaged. At the same time, the gap between the gate and the drain is also easily damaged under the impact of the working voltage. In order to protect the electrodes between the gate and source and the electrodes between the gate and drain, the traditional method is to use polysilicon to ...

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Problems solved by technology

The area of ​​the gate electrode occupies more than half of its total area, and the gate region is easily damaged

At the same time, the gap between the gate and the drain is easily damaged under the impact of the working voltage. In order to protect the electrodes between the gate and the source and the electrodes between the gate and the drain, the traditional method is to use polysilicon to form a series diode to protect the electrodes between the gate and the source and between the gate and the drain. electrodes, but the breakdown voltage and doping control of polysilicon is difficult, and the process requirements are very high

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