A back field back electrode of a crystalline silicon battery and its printing process

A crystalline silicon cell, back field technology, applied in circuits, electrical components, sustainable manufacturing/processing, etc., can solve the problems of passivation, blocking aluminum paste coverage, and gettering, etc., to reduce compounding, increase Passivation area, the effect of improving battery electrical performance

Active Publication Date: 2011-12-14
REALFORCE POWER
View PDF4 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] If the production is carried out according to the conventional battery production process, the back electrode is printed first and then the back field is printed, the area where the back electrode is located will block the coverage of the aluminum paste, that is, the area covered by the back electrode cannot form an aluminum back field, so it cannot play a passivation role. backside, gettering, etc., which is not conducive to the improvement of battery electrical performance

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A back field back electrode of a crystalline silicon battery and its printing process
  • A back field back electrode of a crystalline silicon battery and its printing process
  • A back field back electrode of a crystalline silicon battery and its printing process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] After the monocrystalline silicon wafer is treated with diffusion and light-receiving surface coating, the existing screen printing technology is used to print aluminum paste on its back surface. The aluminum paste is produced by Ruxing Company. The thickness of the printed aluminum paste is 30 μm. After drying the aluminum paste at about 150℃, print continuous back electrode silver aluminum paste on the surface of the aluminum paste. Finally, follow-up production processes such as printing front silver and sintering are carried out.

Embodiment 2

[0023] After the polysilicon wafer is diffused and coated on the light-receiving surface, aluminum paste is printed on the back surface by screen printing technology, and the aluminum paste is produced by Ruxing Company. The thickness of the printed aluminum paste is 40 μm. After drying the aluminum paste at 200°C, print segmented back electrode silver paste on its surface. The type of back electrode silver paste is DuPont PV505. The single width of the back electrode is 3mm and the thickness is 30μm. Finally, follow-up production processes such as printing front silver and sintering are carried out.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention relates to a crystal silicon cell back field back pole and a printing technology thereof. Aluminium paste is printed on the back surface of a crystal silicon sheet and is dried at certain temperature to form an aluminium back field; and back electrode slurry is printed on the dried aluminium paste surface to form a back electrode pattern. According to the printing technology, the area of the crystal silicon cell aluminium back field can be increased, crystal silicon back surface compound is reduced, and the gettering effect of the aluminium back field is increased, and the electric performance of the crystal silicon cell is effectively improved.

Description

Technical field: [0001] The invention relates to a crystalline silicon battery and its processing technology. Background technique: [0002] The conventional screen printing process for crystalline silicon cells in the industry generally prints the back electrode first and then prints the aluminum back field. The aluminum back field can cover the bare silicon wafer, passivate and protect the back surface of the crystalline silicon, and absorb and segregate metal ion impurities in the silicon matrix. In addition, the aluminum back field also plays the role of collecting current, conducting electricity, and converging the current to the back electrode. The main function of the back electrode is to draw the current, to contact the probe of the tester during the test, to provide a welding base during welding, and so on. [0003] If the production is carried out according to the conventional battery production process, the back electrode is printed first and then the back field...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0224
CPCY02P70/50
Inventor 杨雷何晨旭殷海亭钱金梁王冬松王步峰
Owner REALFORCE POWER
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products