A back field back electrode of a crystalline silicon battery and its printing process
A crystalline silicon cell, back field technology, applied in circuits, electrical components, sustainable manufacturing/processing, etc., can solve the problems of passivation, blocking aluminum paste coverage, and gettering, etc., to reduce compounding, increase Passivation area, the effect of improving battery electrical performance
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Embodiment 1
[0021] After the monocrystalline silicon wafer is treated with diffusion and light-receiving surface coating, the existing screen printing technology is used to print aluminum paste on its back surface. The aluminum paste is produced by Ruxing Company. The thickness of the printed aluminum paste is 30 μm. After drying the aluminum paste at about 150℃, print continuous back electrode silver aluminum paste on the surface of the aluminum paste. Finally, follow-up production processes such as printing front silver and sintering are carried out.
Embodiment 2
[0023] After the polysilicon wafer is diffused and coated on the light-receiving surface, aluminum paste is printed on the back surface by screen printing technology, and the aluminum paste is produced by Ruxing Company. The thickness of the printed aluminum paste is 40 μm. After drying the aluminum paste at 200°C, print segmented back electrode silver paste on its surface. The type of back electrode silver paste is DuPont PV505. The single width of the back electrode is 3mm and the thickness is 30μm. Finally, follow-up production processes such as printing front silver and sintering are carried out.
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