Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A continuous single-beam measurement method for the effective lifetime of electron spins in semiconductors

A technology of electron spin and effective life, which is applied in the direction of material excitation analysis, etc., and can solve problems such as high price

Inactive Publication Date: 2011-12-21
SUN YAT SEN UNIV
View PDF0 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current high-speed sampling oscilloscope has a sampling rate of several GHz, and the price is very expensive, and the effective lifetime of the spin that can be tested is above 1 ns.
Furthermore, this technique can only test n-type doped semiconductor samples

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A continuous single-beam measurement method for the effective lifetime of electron spins in semiconductors
  • A continuous single-beam measurement method for the effective lifetime of electron spins in semiconductors
  • A continuous single-beam measurement method for the effective lifetime of electron spins in semiconductors

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0010] Example 1. Faraday rotation angle measurement of electron spin polarization

[0011] When elliptically polarized light excites the z component of electron spin polarization described by equation (1) in the sample, it will cause the Faraday effect, that is, the main axis of elliptically polarized light passing through the sample will rotate by an angle and satisfy the relation:

[0012]

[0013] In the formula, K is the proportional coefficient,

[0014] In the accompanying drawings, set 5 as a 1 / 2 wave plate, and remove the attenuation plate 9 at the same time. First, temporarily remove the sample 4 and set the magnetic field B=0, and rotate 5 until the output voltage 11 of the balanced optical bridge 10 is zero, and keep 5 in this state. Then, put the sample back in again. At this time, due to S 0 The emergence of , resulting in the rotation angle of the main axis of elliptically polarized light In turn, the input of 10 deviates from the previously set bala...

example 2

[0018] Example 2. Circular Dichroism Absorption Measurement of Electron Spin Polarization

[0019] When elliptically polarized light excites the electron spin polarization z component described by equation (1) in the sample, it will lead to circular dichroic absorption effect, that is, Δα(S z )=α+(S z )-α-(S z )∝S z (B), where α+(S z ) and α-(S z ) are the absorption coefficients of right-handed and left-handed circularly polarized light, respectively.

[0020] In the accompanying drawing, 5 is set to be a 1 / 4 wave plate, and its fast and slow axes are respectively along the X', Y' coordinate directions. First remove the sample 4 temporarily. At this time, the left and right circular polarization components of the elliptically polarized light produced by 3 are converted by 5 into linearly polarized light of orthogonal polarization, which are polarized along the X and Y directions respectively. After passing through the polarization beam splitting prism 6, the X and Y pol...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a continuous single-beam testing method for electronic spin useful life in a semiconductor. An experimental measuring light path showed in an attached drawing is formed by using a continuous single laser beam, a polarizing disk, a 1 / 2 wave plate, a 1 / 4 wave plate, a polarization beam splitter prism, an attenuating sheet, a balance light detector and a variable magnetic field. The continuous single laser beam not only excites electronic spin polarization in the semiconductor, but also testes the Faraday effect and the circular dichroism absorption effect of spin polarization induction. An experimental device is simple, and the manufacturing cost is low. A change curve of a Faraday corner or circular dichroism absorption along with magnetic field strength is tested experimentally, and the change curve is further fitted by using a developing theoretical model, so that the useful life of electronic spin can be obtained.

Description

technical field [0001] The invention relates to an optical testing method for the effective lifetime of electron spins. It is characterized by the use of continuous single-beam light, so the equipment is simple and cheap. The invention belongs to the technical field of semiconductor parameter optical testing and has broad application prospects. Background technique [0002] In recent years, research on semiconductor spintronics has become an international frontier hotspot. The effective lifetime of electron spin has become one of the most basic and necessary test parameters. The currently developed optical testing methods for the effective lifetime of electron spins are mainly based on time-resolved pump-probe techniques of femtosecond or picosecond mode-locked pulsed lasers, such as time-resolved circular dichroic saturated absorption spectroscopy and Faraday spectroscopy. On the other hand, techniques based on time-resolved measurements of luminescence circular polariza...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01N21/63
Inventor 赖天树黄晓婷李佳明
Owner SUN YAT SEN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products