A Terahertz Detector Based on Antiferromagnetic Nonmagnetic Metal Heterojunction

A terahertz detector and antiferromagnetic technology, which is applied in photometry using electric radiation detectors, metal material coating technology, vacuum evaporation plating, etc., can solve the problems of lack of terahertz detection technology and achieve zero work consumption, fast response, and easy integration

Active Publication Date: 2021-02-12
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, terahertz technology still faces many challenges before it can be widely used in practical applications.
One of the main factors restricting the development of terahertz technology is the lack of terahertz detection technology with high sensitivity, low cost, low power consumption and fast response that can work at room temperature

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A Terahertz Detector Based on Antiferromagnetic Nonmagnetic Metal Heterojunction

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] Spin-coat photoresist on a 4-inch high-resistance silicon substrate, and photoetch many pieces of 1x2mm 2 Then put it into the magnetron sputtering deposition chamber to prepare NiO antiferromagnetic material on it. When sputtering the antiferromagnetic material, add a magnetic field with an intensity of 1000Oe parallel to the substrate surface, and the direction of the magnetic field is vertical. on the long side of the small rectangular block. The thickness of the antiferromagnetic layer is 3nm. Then proceed to deposit a non-magnetic metal Pt layer with a thickness of 3nm. Take out the sample for degumming, spin-coat photoresist again, and photoetch 1x0.5mm on both sides of the small rectangle 2 Then put the sample into the magnetron sputtering deposition chamber again to deposit a gold electrode with a thickness of 200nm. Take out the samples for degumming, cleaning, cutting, spot welding of leads, and packaging to complete the production of the detector.

Embodiment 2

[0018] Spin-coat photoresist on a 4-inch high-resistance silicon substrate, and photoetch many pieces of 1x2mm 2 The size of the blank rectangular area, and then placed in the magnetron sputtering deposition chamber on which to prepare Cr 2 o 3 For the antiferromagnetic material, a magnetic field with a strength of 1000Oe parallel to the substrate surface is applied when the antiferromagnetic material is deposited by sputtering, and the direction of the magnetic field is perpendicular to the long side of the small rectangular block. The thickness of the antiferromagnetic layer is 30nm. Then continue to deposit a non-magnetic metal W layer with a thickness of 30nm. Take out the sample for degumming, spin-coat photoresist again, and photoetch 1x0.5mm on both sides of the small rectangle 2 Then put the sample into the magnetron sputtering deposition chamber again to deposit a gold electrode with a thickness of 200nm. Take out the samples for degumming, cleaning, cutting, spot...

Embodiment 3

[0020] Spin-coat photoresist on a 4-inch high-resistance silicon substrate, and photoetch many pieces of 1x2mm 2 The blank rectangular area of ​​the size is then put into the magnetron sputtering deposition chamber to prepare BiFeO on it 3 For the antiferromagnetic material, a magnetic field with a strength of 1000Oe parallel to the substrate surface is applied when the antiferromagnetic material is deposited by sputtering, and the direction of the magnetic field is perpendicular to the long side of the small rectangular block. The thickness of the antiferromagnetic layer is 300nm. Then proceed to deposit a non-magnetic metal Pd layer with a thickness of 300nm. Take out the sample for degumming, spin-coat photoresist again, and photoetch 1x0.5mm on both sides of the small rectangle 2 Then put the sample into the magnetron sputtering deposition chamber again to deposit a gold electrode with a thickness of 200nm. Take out the samples for degumming, cleaning, cutting, spot wel...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a terahertz detector based on an antiferromagnetic nonmagnetic metal heterojunction, which belongs to the field of photoelectric detection technology. Hertz radiation energy is converted into spin waves, and the inverse spin Hall effect in non-magnetic metals with strong spin-orbit coupling is used to convert spin waves into charge flow at the interface, which is read out by electrodes on both sides of the non-magnetic metal surface Voltage signal, so as to realize the detection of terahertz radiation. The invention utilizes electron spin properties to realize terahertz detection. It is a spin terahertz detector with the advantages of zero power consumption, fast response, easy integration, and room temperature operation.

Description

technical field [0001] The invention belongs to the field of photoelectric detection technology, and specifically relates to the use of the antiferromagnetic coupling resonance absorption characteristics of antiferromagnetic materials in the terahertz band to convert terahertz radiation energy into spin waves, and then utilize strong spin-orbit coupling The inverse spin Hall effect in non-magnetic metals converts spin waves into charge flow at the interface, and finally reads voltage signals on the electrodes on both sides of the non-magnetic metal surface, thereby realizing the detection of terahertz radiation. The invention uses electron spin to realize terahertz detection. It is a spin terahertz detector with the advantages of zero power consumption, fast response, easy integration, and room temperature operation. Background technique [0002] Terahertz electromagnetic waves have great scientific value and broad application prospects in object imaging, environmental monit...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): G01J1/42C23C14/35C23C14/08C23C14/18
CPCC23C14/085C23C14/185C23C14/35G01J1/42
Inventor 吴敬黄志明李敬波江林周炜姚娘娟黄敬国褚君浩
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap