Heterojunction piezoelectric nanogenerator and manufacturing method thereof

A nanogenerator, piezoelectric technology, applied in the manufacture/assembly of piezoelectric/electrostrictive devices, generators/motors, piezoelectric effect/electrostrictive or magnetostrictive motors, etc. Device performance and service life, easy wear, and high generator manufacturing cost, to achieve the effect of reducing manufacturing cost, simple process and prolonging service life

Inactive Publication Date: 2011-12-28
NAT UNIV OF DEFENSE TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are still some defects and deficiencies in this generator, which are mainly manifested in: in order to form a unidirectional output DC current during the working process of the generator, the upper electrode must be a layer of electron affinity with a work function greater than that of n-type zinc oxide semiconductor materials. The noble metal materials such as Au or Pt and other energy, in order to facilitate the formation of Schottky contact with rectification effect, so that the manufacturing cost of the generator is relatively high; in addition, noble metals such as Au or Pt are soft metal materials, during the working process of the generator It is easy to wear and tear, which affects the performance and service life of the device

Method used

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  • Heterojunction piezoelectric nanogenerator and manufacturing method thereof
  • Heterojunction piezoelectric nanogenerator and manufacturing method thereof
  • Heterojunction piezoelectric nanogenerator and manufacturing method thereof

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Embodiment Construction

[0026] The present invention will be further described below with reference to the accompanying drawings and embodiments.

[0027] refer to figure 1 , this embodiment includes a semiconductor nanorod array 1, a semiconductor nanogroove array 2, a conductive substrate 3, an encapsulation layer 4 and a lead 5, and the semiconductor nanorods of the semiconductor nanorod array 1 are made of n-type semiconductors with piezoelectric properties. It is made of zinc oxide material and is vertically arranged on the conductive substrate 3 as the lower electrode of the generator; the semiconductor nano-groove array 2 is a p-type low-resistance silicon material, which is used as the upper electrode of the generator; the semiconductor nano-groove array 2 A nested structure is formed with the semiconductor nanorod array 1, and the upper and lower electrodes are respectively connected by lead I5-1 and lead II5-2; the outer periphery of the semiconductor nanogroove array 2 and the semiconducto...

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Abstract

The invention discloses a heterojunction piezoelectric type nano generator and a manufacturing method thereof. The heterojunction piezoelectric type nano generator comprises a semiconductor nano rod array, a semiconductor nano groove array, a conducting substrate, a packaging layer and leading wires, wherein the semiconductor nano rod array is vertically arranged on the conducting substrate whichis used as a lower electrode of the generator; the semiconductor nano groove array and the semiconductor nano rod array form a nested structure; the semiconductor nano groove array serves as an upperelectrode of the generator; the upper electrode and the lower electrode of the generator are led by different leading wires; and the packaging layer is arranged on the periphery of the semiconductor nano groove array and the semiconductor nano rod array. The invention also discloses a manufacturing method for the heterojunction piezoelectric type nano generator. The heterojunction piezoelectric type nano generator is simple and compact in structure, relatively longer in service life, simple in manufacturing process and low in manufacturing cost.

Description

technical field [0001] The invention relates to a nanogenerator and a manufacturing method thereof, in particular to a heterojunction piezoelectric nanogenerator and a manufacturing method thereof which realizes unidirectional current output by the heterojunction rectification effect. Background technique [0002] Since the concept of nanoscience was put forward in the early 1980s, nanotechnology has achieved unprecedented rapid development and has received extensive attention from all over the world. Today, nanotechnology has been widely used in materials, machinery, electronics, biology, medicine and many other fields. Among them, nano-devices have attracted the research interest of researchers all over the world due to their small size and good transmission performance. However, since the development of nanotechnology, most of the research has focused on the development of high-sensitivity and high-performance nanodevices, while the research on nanoscale power supply tec...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L41/113H02N2/18H01L41/22B82Y40/00H01L41/25
Inventor 邵铮铮张学骜王飞王广贾红辉常胜利秦石乔
Owner NAT UNIV OF DEFENSE TECH
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