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Method for cleaning semiconductor substrate and forming gate dielectric layer

A gate dielectric layer and semiconductor technology, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems that cannot guarantee that halogenated hydrocarbons will not be produced, increase production costs, etc., and achieve improved electrical performance and cost savings , Improve the effect of uniformity

Active Publication Date: 2016-03-30
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, using this method needs to first vaporize the halogenated hydrocarbon and pass it into the reaction furnace tube for combustion reaction with oxygen, which is different from the method commonly used in semiconductor manufacturing plants to carry the halogenated hydrocarbon into the reaction furnace tube through inert gas bubbling (bubble). There is a big difference, and corresponding supporting facilities need to be added, which will increase production costs
Moreover, this method cannot guarantee that no residues of said halogenated hydrocarbons will be produced

Method used

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  • Method for cleaning semiconductor substrate and forming gate dielectric layer
  • Method for cleaning semiconductor substrate and forming gate dielectric layer
  • Method for cleaning semiconductor substrate and forming gate dielectric layer

Examples

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Embodiment 1

[0041] figure 1 A schematic flow chart of a method for cleaning a semiconductor substrate provided by an embodiment of the present invention, comprising: step S1: providing a semiconductor substrate containing alkaline metal; step S2: introducing a halogenated hydrocarbon to remove the alkalinity metal; and step S3: passing a cleaning gas to remove the residue of the halogenated hydrocarbon. Clean the semiconductor substrate by using the method provided in the embodiment of the present invention, and by passing the cleaning gas to react with the residue of the halogenated hydrocarbon, the residue of the halogenated hydrocarbon can be completely removed, and the semiconductor substrate can be improved. Uniformity of thickness, improved electrical properties of the final product, and cost savings.

[0042] refer to figure 1 with figure 2, step S1 is executed to provide a semiconductor substrate 11 containing an alkaline metal 12 on the semiconductor substrate 11 .

[0043] ...

Embodiment 2

[0061] The electrical properties of the gate dielectric layer are very important to the performance of semiconductor devices. In order to remove the basic metal brought in during the formation of the gate dielectric layer and completely remove the halogenated hydrocarbons remaining on the gate dielectric layer, an embodiment of the present invention also provides a method for forming the gate dielectric layer method, please refer to Figure 5 , including: step S1': providing a semiconductor substrate; step S2': forming a gate dielectric layer on the semiconductor substrate, and the gate dielectric layer contains alkaline metal; step S3': introducing a halogenated hydrocarbon to remove all the basic metal; and step S4': passing a cleaning gas to remove the residue of the halogenated hydrocarbon. The gate dielectric layer is formed by using the method provided in the embodiment of the present invention, and the residue of the halogenated hydrocarbon can be completely removed by...

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PUM

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Abstract

The invention provides a method for cleaning a semiconductor base and a method for forming a gate-medium layer. The method for cleaning the semiconductor base comprises the following steps of: providing the semiconductor base, wherein alkaline metal is contained on the semiconductor base; introducing halogenated hydrocarbon, and removing the alkaline metal; and introducing cleaning gas, and removing the residues of the halogenated hydrocarbon. The method for forming the gate-medium layer comprises the following steps of: providing a semiconductor substrate; forming the gate-medium layer on the semiconductor substrate, wherein alkaline metal is contained on the gate-medium layer; introducing halogenated hydrocarbon, and removing the alkaline metal; and introducing cleaning gas, and removing the residues of the halogenated hydrocarbon. Through the methods provided by the embodiment of the invention, the halogenated hydrocarbon remaining on the semiconductor base or the gate-medium layer can be completely removed, and the thickness uniformity of the semiconductor base or the gate-medium layer is improved, thereby the electrical performance of a final product is improved, and the production cost is saved.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process, in particular to a method for cleaning a semiconductor substrate and forming a gate dielectric layer. Background technique [0002] In the semiconductor manufacturing process, the cleanliness of the semiconductor substrate has a very important impact on the electrical properties of the final product. However, when performing various operations on the semiconductor substrate in the clean room, the human body will bring "biometals" into the environment of the clean room, generally including alkaline metals such as Na, K, Mg, and Ca. These alkaline metals will adhere to the semiconductor substrate, thereby affecting the electrical performance of the semiconductor device. Therefore, the semiconductor substrate needs to be cleaned to remove these alkaline metals. [0003] In the prior art, vaporized halogenated hydrocarbons are generally introduced to combust with oxygen to produce acidic gas...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01L21/28
Inventor 舒畅
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP