Level switching circuit for high-voltage integrated circuit

Abstract

The invention relates to a level switching circuit for a high-voltage integrated circuit, which comprises a pulse generating circuit 601, a high-voltage DMOS (double-diffusion metal oxide semiconductor) transistor 602, a high-voltage DMOS transistor 603, a lower bridge arm control circuit 618, a high-voltage region 604, a quick charge level switching circuit 611 positioned in a low-voltage regionand a quick charge level switching circuit 606 positioned in the high-voltage region, wherein a capacitor 622 is a parasitic capacitor of the high-voltage DMOS transistor 602, a capacitor 623 is a parasitic capacitor of the high-voltage DMOS transistor 603, an input signal 625 enters the pulse generating circuit 601 and the lower bridge control circuit 618 from an IN end of the high-voltage integrated circuit 600, and the first output end A of the pulse generating circuit 601 is connected with a grid electrode of the high-voltage DMOS transistor 602 and the input end of the rapid quick level switching circuit 611. The level switching circuit for the high-voltage integrated circuit has the characteristics that the operation is flexible, and the situation that the output pulse width is changeless when the input pulse width is little is avoided.

Description

technical field [0001] The invention relates to a level conversion circuit for high-voltage integrated circuits, especially a circuit design for transmitting signals from a low-voltage area to a high-voltage area in a high-voltage integrated circuit HVIC. DMOS technology. Background technique [0002] A high-voltage integrated circuit is a gate drive circuit with functions such as undervoltage protection and logic control. It combines power electronics with semiconductor technology, gradually replaces traditional discrete components, and is increasingly used in IGBT, high-power MOSFET drive field. [0003] High-voltage integrated circuits have low-voltage areas and high-voltage areas. During the working process of high-voltage integrated circuits, the lowest level of the high-voltage area needs to be switched between 0-600V or 0-1200V at high speed. Due to the existence of parasitic capacitance CM, the parasitic capacitance The voltage needs to be charged for a period of t...

AI Technical Summary

Problems solved by technology

[0052] According to the design requirements of high-voltage integrated circuits, the difference between T4 and T2-T1 sometimes reaches 200ns. For high-speed and high-voltage integrated circuits, this area where the output pulse width is uncontrollable is harmful, especially in the case of driving motors. During the start-up process, the motor generally starts from T4 with a step length of 20ns. If a pulse of T4+200ns is applied to the motor at the beginning, it will undoubtedly affect the smoothness of the motor's starting process and affect the motor. service life

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