Hole-transmission type organic thin-film transistor and manufacturing method thereof
A technology of hole transport and organic thin film, which is applied in the manufacture of semiconductor/solid-state devices, electric solid-state devices, semiconductor devices, etc., can solve the problems of increasing manufacturing costs, harsh manufacturing environment requirements, and limiting the development of transistors, so as to reduce mutual collisions, The effect of improving the transport ability and carrier mobility and reducing the threshold voltage
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Embodiment 1
[0048] Device structure such as figure 1 As shown, it is a bottom-gate top-contact structure. The material and thickness of each layer of the device are as follows: the substrate 1 is glass, the gate electrode 2 is ITO (180 nm), the gate insulating layer 3 is PMMA (500 nm), the first transition layer 4 and the second transition layer 7 are both Hexathiophene (2 nm), the first organic semiconductor layer 5 and the second organic semiconductor layer 8 are copper phthalocyanine (25 nm), the hole blocking layer 6 is TPBi (5 nm), the source electrode 9 and the drain electrode 10 are both for Au (50 nm).
[0049] The preparation method of the hole transport type organic thin film transistor is as follows:
[0050] ① Thoroughly clean the sputtered ITO glass substrate first, and dry it with dry nitrogen after cleaning;
[0051] ②Using the spin coating method to prepare PMMA film on ITO to form gate insulating layer;
[0052] ③Heating and baking the spin-coated PMMA film;
[0053]...
Embodiment 2
[0061] The structure of the transistor is as figure 1 shown. The material and thickness of each layer of the transistor are as follows: the substrate 1 is glass, the gate electrode 2 is ITO (180 nm), the gate insulating layer 3 is PS (50 nm), the first transition layer 4 and the second transition layer 7 are both Hexathiophene (2 nm), the first organic semiconductor layer 5 and the second organic semiconductor layer 6 are copper phthalocyanine (25 nm), the hole blocking layer 6 is TPBi (5 nm), the source electrode 9 and the drain electrode 10 are both for Au (50 nm).
[0062] The fabrication process of the transistor is similar to that of Example 1.
Embodiment 3
[0064] Transistor structures such as figure 1 shown. The material and thickness of each layer of the transistor are: the substrate 1 is glass, the gate electrode 2 is ITO (180 nm), the gate insulating layer 3 is PVA (2000 nm), the first transition layer 4 and the second transition layer 7 are both Hexathiophene (2 nm), the first organic semiconductor layer 5 and the second organic semiconductor layer 6 are copper phthalocyanine (25 nm), the hole blocking layer 6 is BCP (5 nm), the source electrode 9 and the drain electrode 10 are both for Au (50 nm).
[0065] The fabrication process of the transistor is similar to that of Example 1.
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