Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Test structure for analyzing through-hole type metal-interconnected electromigration reliability

A test structure, metal interconnection technology, applied in the direction of circuits, electrical components, electrical solid devices, etc., can solve the problems of destroying the integrity of the test structure, unfavorable comprehensive analysis of chips, etc., to achieve convenient and quick positioning, improve efficiency, and save use time Effect

Inactive Publication Date: 2012-02-01
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF7 Cites 16 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But this destroys the integrity of the test structure, which is not conducive to a comprehensive analysis of each layer of the chip

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Test structure for analyzing through-hole type metal-interconnected electromigration reliability
  • Test structure for analyzing through-hole type metal-interconnected electromigration reliability
  • Test structure for analyzing through-hole type metal-interconnected electromigration reliability

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] The top view of the test structure for analyzing the electromigration reliability of through-hole metal interconnection proposed by the embodiment of the present invention is as follows image 3 shown. The test structure includes at least two layers of metal wires, an insulating medium layer is filled between adjacent metal wires in each layer, the metal wires of adjacent layers are separated by an insulating medium layer, and the metal wires of adjacent layers Conduction is realized by metal vias, and at least one insulating dielectric layer is covered on the top layer metal line. and figure 2 Compared with the top view of the existing test structure shown, the difference is that the insulating dielectric layer covering the top metal line of the test structure contains a metal mark for indicating the position of the metal via.

[0023] The shape of each metal marker is preferably a rectangle (or other shapes similar to a rectangle, such as a rounded rectangle, or a ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Lengthaaaaaaaaaa
Widthaaaaaaaaaa
Login to View More

Abstract

The invention provides a test structure for analyzing through-hole type metal-interconnected electromigration reliability. The test structure comprises at least two layers of metal wires; an insulating dielectric layer is respectively filled between adjacent metal wires of each layer; adjacent layers of metal wires are separated by insulating dielectric layers, and the conduction of the adjacent layers of metal wires is realized through metal through holes; and at least one layer of insulating dielectric layers covers on the top layer of metal wires. The test structure for analyzing the through-hole type metal-interconnected electromigration reliability is characterized in that: the insulating dielectric layers covering on the top layer of metal wires contain metal markers which are used for indicating the positions of the metal through holes. With the adoption of the test structure provided by the invention, the positions of metal through holes can be known through observing from any layer by using an SEM (Scanning Electron Microscope) without grinding to strip layers, and the metal through holes can be conveniently and fast positioned when an FIB (Focus Ion Beam) is used for cutting, so that the efficiency is increased and the time for using machine platforms is saved.

Description

technical field [0001] The invention relates to the technical field of semiconductor integrated circuit manufacturing, in particular to a test structure for analyzing the electromigration reliability of through-hole metal interconnection. Background technique [0002] Reliability testing has two main functions: ①Evaluate the actual working life of the device; ②Provide the device degradation failure mechanism for the process, thereby optimizing the process. Chip-level reliability (WLR, Wafer Level Reliability) is to test the reliability parameters after the chip manufacturing process is completed or during the process. Compared with the traditional reliability test, this test is equivalent to an online test. WLR can specifically monitor different reliability problems by category, so it can provide reliability test data for the process in time. [0003] Generally speaking, the WLR test includes the following parts: ①Device reliability test: including mobile ions, hot carriers...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L23/544
CPCH01L2924/0002H01L2924/00
Inventor 梁山安务林凤郭强
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com