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Method for forming cu film, and storage medium

A film-forming method and film-forming technology, applied in gaseous chemical plating, coatings, electrical components, etc., can solve problems such as slow film-forming speed

Inactive Publication Date: 2012-02-08
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, most of the Cu complexes used as film-forming raw materials are monovalent complexes. Although Cu films can be formed without agglomeration at a temperature of about 130 to 150°C, it takes time to form initial nuclei and the film-forming rate is slow.

Method used

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  • Method for forming cu film, and storage medium
  • Method for forming cu film, and storage medium
  • Method for forming cu film, and storage medium

Examples

Experimental program
Comparison scheme
Effect test

no. 1 Embodiment approach

[0028] (Structure of Film Formation Apparatus for Carrying out the Film Formation Method of the First Embodiment)

[0029] figure 1 It is a schematic cross-sectional view showing an example of the structure of a film forming apparatus for carrying out the film forming method according to the first embodiment of the present invention.

[0030] This film forming apparatus 100 has a substantially cylindrical chamber 1 that is airtightly configured as a processing container, and a susceptor 2 for horizontally supporting a semiconductor wafer W serving as a substrate to be processed is provided in a circle at the lower center thereof. The cylindrical supporting member 3 supports the state arrangement. The base 2 is made of ceramics such as AlN. In addition, a heater 5 is embedded in the susceptor 2 , and a heater power supply 6 is connected to the heater 5 . On the other hand, a thermocouple 7 is provided near the upper surface of the susceptor 2 , and a signal from the thermoco...

no. 2 Embodiment approach

[0062] (Structure of Film Formation Apparatus for Carrying out the Film Formation Method of the Second Embodiment)

[0063] Figure 5 It is a schematic diagram showing a film forming apparatus for carrying out the film forming method according to the second embodiment of the present invention. This film forming apparatus is a multi-chamber type capable of performing initial Cu nucleation and subsequent Cu deposition continuously in-situ without breaking vacuum.

[0064] All of the film forming apparatuses are kept in a vacuum, and include a Cu initial nucleation unit 61 and a Cu deposition unit 62 , which are connected to a transfer chamber 65 through a gate valve G. In addition, load lock chambers (load lock chambers) 66 and 67 are connected to the transfer chamber 65 via a gate valve G. As shown in FIG. The transfer chamber 65 is kept in vacuum. On the opposite side of the transfer chamber 65 of the load-lock vacuum chambers 66, 67, an atmospheric loading and unloading ch...

no. 3 Embodiment approach

[0083] (Structure of Film Formation Apparatus for Carrying out the Film Formation Method of the Third Embodiment)

[0084] Figure 7 It is a schematic diagram showing an example of a film forming apparatus for carrying out the film forming method according to the third embodiment of the present invention. In this embodiment, in addition to having a preheating unit 91 and a Cu film forming unit 92 instead of the Cu initial nucleation unit 61 and Cu deposition unit 62 in the apparatus of the second embodiment, it has the same Figure 5 For the same structure, the same number is assigned to the same structure, and description is omitted.

[0085] The preheating unit 91 and the Cu film forming unit 92 are maintained in vacuum, and are connected to the transfer chamber 65 through the gate valve G.

[0086] Such as Figure 8 As shown, the preheating unit 91 has a chamber 101, a base 102 embedded with a heater 102a installed in the chamber 101, and an atmospheric gas supply source...

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Abstract

A film-forming raw material composed of a Cu complex is supplied to a wafer, which is kept at a relatively high first temperature and has a Ru film as a film-forming base film, and an initial nucleus of Cu is formed on the wafer. Then, the film-forming raw material composed of the Cu complex is supplied to the wafer kept at a relatively low second temperature, and Cu is deposited on the wafer having the initial nucleus of Cu formed thereon.

Description

technical field [0001] The present invention relates to a method for forming a Cu film and a storage medium for forming a Cu film by CVD on a substrate such as a semiconductor substrate. Background technique [0002] In recent years, with the increase in the speed of semiconductor devices and the miniaturization of wiring patterns, Cu, which has higher conductivity than Al and has good electromigration resistance, has attracted attention as a material for wiring, Cu-plated seed layers, and contact plugs. . [0003] As the Cu film-forming method, physical vapor deposition (PVD) method typified by sputtering method is often used, but with the miniaturization of semiconductor devices, the disadvantage of poor step coverage has become apparent. [0004] Therefore, a chemical vapor deposition (CVD) method in which a Cu film is formed on a substrate by a thermal decomposition reaction of a source gas containing Cu and a reduction reaction of the source gas by a reducing gas has b...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/18C23C16/52H01L21/28H01L21/285H01L21/3205H01L23/52
CPCC23C16/0281C23C16/18H01L21/28556H01L21/76876H01L23/53238H01L2221/1089H01L2924/0002H01L2924/00C23C16/52H01L21/285
Inventor 桧皮贤治小岛康彦
Owner TOKYO ELECTRON LTD