Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Measuring device and measuring method for film photo-thermal property

A measuring device and thin film technology, applied in the measurement of color/spectral characteristics, etc., can solve the problem of lack of detailed and systematic discussion, and achieve the effect of improving detection sensitivity

Active Publication Date: 2014-04-09
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For the frequency conversion measurement method that can measure the photothermal information inside the film, the existing theory and technology have not yet discussed in detail and systematically

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Measuring device and measuring method for film photo-thermal property
  • Measuring device and measuring method for film photo-thermal property
  • Measuring device and measuring method for film photo-thermal property

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0086] Measurement Example 1: Measuring different thicknesses of HfO 2 The thermal conductivity of the film.

[0087] Such as Figure 6 shown, for 500nm HfO 2 Thin film, its phase signal has a local peak at the modulation frequency of 17.5kHz, calculated by the formula, the thermal conductivity of this film k=0.06Wm -1 K -1 , compared with the results measured by other methods in the literature 0.05Wm -1 K -1 relatively close. Other thicknesses of HfO 2 The measured and calculated results of the monolayer film are summarized in Table 1:

[0088] Table 1 HfO with different thicknesses 2 The thermal conductivity corresponding to the monolayer film

[0089]

Embodiment 2

[0090] Measurement Example 2: Measurement of SiO 2 Thin film TiO 2 The depth of the strongly absorbing layer.

[0091] According to the requirements of the experiment, we plated SiO with a strong absorbing layer inside 2 film. Of which SiO 2 The layer thickness is 1900nm, and the strong absorbing layer is oxygen-deprived TiO 2 , with a thickness of 200 nm. We measured the photothermal amplitude signal as Figure 7shown. As the modulation frequency increases, the photothermal signal decreases rapidly at first, but when it reaches a certain characteristic frequency, a local peak appears, and the peak frequency is 8.5kHz. By consulting other relevant literature, we will SiO 2 The thermal conductivity of the material is taken as 0.2Wm -1 K -1 , the final calculation shows that the depth of the strong absorption layer is 1950nm, which is very close to the actual value of 1900nm.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
depthaaaaaaaaaa
Login to View More

Abstract

The invention discloses a measuring device and measuring method for film photo-thermal property. Based on the original surface thermal lens technology, the modulation frequency of pumping light beams is changed, so that the amplitude of detecting signals and the relationship of phase signals changed along with the frequency can be obtained. The relationship and the calculated result of the theoretical model are compared, and then some important information of the inner part of the film can be obtained. In the invention, not only can the absorption rate of the film be measured, but also the thermal conduction rate of a single-layer film and the deep indexing of some strong absorption impurities can be measured, so that the comprehensive evaluation on the photo-thermal property of the film can be conducted, and greater auxiliary action on the aspects of optimizing film coating process, seeking injury mechanisms and the like can be achieved.

Description

technical field [0001] The invention relates to film measurement, in particular to a measuring device and method for measuring photothermal properties of a film. Background technique [0002] Schematic diagram of surface thermal lens technology figure 2 shown. The intensity-modulated fundamental mode pump laser converges and incident on the surface of the film sample, the film absorbs heat to form a thermal wave and diffuses to the substrate to cause the temperature rise of the film system, which in turn leads to thermal expansion to form a surface heat pack, the longitudinal height of the heat pack increases with the pump The intensity of the Pu laser varies, and the radial height can be regarded as a Gaussian distribution. This phenomenon is also known as "photothermal deformation". A beam of probing laser is irradiated onto the surface of the heat pack, and the heat pack is located in the center of the probe spot and smaller than the probe spot. Affected by the heat p...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G01N21/31
Inventor 徐俊海赵元安范正修
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products