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Dead zone enhanced protection high speed complementation switch drive circuit

A complementary switch and drive circuit technology, applied in electronic switches, logic circuits, electrical components, etc., can solve the problems of PCB board power consumption, complexity and high cost, and achieve the effect of ensuring continuity and improving working speed.

Active Publication Date: 2013-07-17
58TH RES INST OF CETC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The traditional board-level high-speed interface circuit adopts a large-scale parallel processing structure. The disadvantage of this structure is that the power consumption, complexity and cost of the IC package and the corresponding PCB board are too high

Method used

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  • Dead zone enhanced protection high speed complementation switch drive circuit
  • Dead zone enhanced protection high speed complementation switch drive circuit
  • Dead zone enhanced protection high speed complementation switch drive circuit

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Embodiment Construction

[0019] The present invention will be described in further detail below in conjunction with the accompanying drawings and examples.

[0020] figure 2 The switch drive signals of the full bridge drive circuit in the middle LVDS transmission circuit are D and Dn signals which are mutually inverse. Assuming that D flips from 0 to 1, since the flip signal has a certain rise time, when the voltage is at the middle level, there will be a "dead zone" situation in which M1 and M2 are turned on at the same time for a period of time, and the working states of M1 and M2 will be at the same time. Changes, so that the output current will fluctuate, slowing down the direction reversal speed of the output current signal. By changing the D signal added to M1 and M2 into D1 and D2 signals with a certain "dead time enhancement" and a certain delay between them, it is assumed that D1 is still 0 when the D2 signal starts to flip from 0 to 1, When the working state of the M2 tube is stable, the ...

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Abstract

The invention relates to the integrated circuit signal driving technology field, concretely relating to a high speed complementation switch signal drive circuit with a dead zone enhanced protection structure. The high speed complementation switch signal drive circuit is obtained through connection of a complementation signal generation circuit and a dead zone enhanced protection circuit, continuity of current output by a complementation switch can be ensured, and since an overturn speed of a single tube is higher than a speed of state simultaneous overturn of N-P two Mos tubes, the high speedcomplementation switch signal drive circuit has a higher work speed.

Description

technical field [0001] The invention belongs to the technical field of integrated circuits, and in particular relates to a high-speed complementary switching signal driving circuit. technical background [0002] In recent years, with the rapid development of CMOS process technology, the processing speed of microprocessor, multimedia, virtual reality, optical transmission connection, intelligent router and network technology has continued to increase, and the board-level processing speed between chips has reached GHz. The traditional board-level high-speed interface circuit adopts a large-scale parallel processing structure. The disadvantage of this structure is that the power consumption, complexity and cost of the IC package and the corresponding PCB board are too high. For a variety of battery-operated mobile portable processing systems, low power consumption is a primary requirement; for other systems, low power consumption can reduce the cost of packaging and thermal coo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03K17/687H03K19/01
Inventor 陈珍海季惠才黄嵩人于宗光
Owner 58TH RES INST OF CETC