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Vibration transducer and manufacturing method thereof

A technology of vibration sensors and vibration beams, which is applied in the direction of instruments, microstructure technology, microstructure devices, etc., can solve the problems of devices not working, achieve the effect of increasing SN ratio, simple structure, and suppressing crosstalk

Active Publication Date: 2012-04-04
YOKOGAWA ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This leads to the problem that the vibrating beam sticks to the electrodes, making the device non-functional

Method used

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  • Vibration transducer and manufacturing method thereof
  • Vibration transducer and manufacturing method thereof
  • Vibration transducer and manufacturing method thereof

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Embodiment Construction

[0117] Embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0118] Figure 1 to Figure 15 Important parts of the vibration sensor according to the embodiment of the present invention are shown. Figure 1A and Figure 1B These are a plan view and a cross-sectional view showing the configuration of important parts of the vibration sensor assembly, respectively. Figure 2 to Figure 15 The manufacturing process is shown. The following will describe only the differences Figure 28 components in .

[0119] Such as Figure 1A and Figure 1B As shown, a vibrating beam 32 is arranged in a vacuum chamber 33 and a tensile stress is applied to a substrate 31 . Vibration beam 32 is single crystal silicon having a cross-sectional shape that is longer in a direction perpendicular to surface 311 of substrate 31 than in a direction parallel to surface 311 .

[0120] The first electrode plate 34 is formed in a plate shape,...

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Abstract

The present invention provides a vibration transducer including a silicon single crystal vibration beam provided over a silicon single crystal substrate, the vibration beam having a sectional shape that is longer in a direction perpendicular to a surface of the silicon single crystal substrate than in a direction parallel with it, a shell made of silicon, surrounding the vibration beam with a gap, and forming a vacuum room together with the silicon single crystal substrate, a plate-like first electrode plate disposed parallel with the surface of the silicon single crystal substrate, the first electrode plate having one end connected to the vibration beam, plate-like second and third electrode plates disposed parallel with the surface of the silicon single crystal substrate so as to be opposed to each other with the vibration beam interposed in between, and asperities formed on confronting side surfaces of the vibration beam and the second and third electrode plates.

Description

technical field [0001] The invention relates to a vibration sensor and a manufacturing method thereof. Background technique [0002] Figure 28 to Figure 37 An important part of a vibration sensor of related art that is generally used is shown. Figure 28 shows the configuration of important parts of the vibration sensor assembly, Figure 29 to Figure 37 The manufacturing process is shown. [0003] The manufacturing process will be described below. [0004] First, if Figure 29 As shown, a silicon oxide film 10a is formed on an n-type single crystal silicon substrate 1 and then patterned. [0005] A groove is formed in the substrate 1 by undercutting the removed portion of the oxide film 10a, and a film having 10 is grown in the groove by selective epitaxial growth. 18 cm -3 The boron concentration of P + monocrystalline silicon to form P + Single crystal silicon layer 11. [0006] Next, at P + The surface of the monocrystalline silicon layer 11 is grown with 3×10 ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01H11/06
CPCB81B2201/0264G01L1/106B81B2203/0118G01L9/0013B81B2201/025B81B2201/0285G01L9/0019B81B3/001H03H9/2457H03H2009/02496
Inventor 吉田隆司
Owner YOKOGAWA ELECTRIC CORP
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