Si based HEMT embedded micro accelerator and production method thereof

Abstract

The invention provides an Si based HEMT (High Electron Mobility Transistor) embedded micro accelerator, which comprises an Si substrate; the Si substrate comprises a micro accelerator structure composed of a peripheral base formed by etching, a cantilever beam and a mass block; the Si substrate has an HEMT material layer film at the processing position of the HEMT, and the HEMT material layer film comprises a GexSil-x buffer layer and other HEMT material layers; and the HEMT is processed on the HEMT material layer film. The invention further provides a production method for the Si based HEMT embedded micro accelerator. The accelerator provided by the invention solves the problems that a GaAS based microstructure has poorer elasticity, easy breakage in application process, higher test working difficulty, and the like.

Description

technical field [0001] The invention relates to the technical field of micro-accelerometers, in particular to a Si-based HEMT embedded micro-accelerometer and a production method thereof. Background technique [0002] With the development of micro-electro-mechanical technology, market applications have put forward higher requirements for accelerometers, such as high precision, high linearity, and high stability. The traditional detection methods of MEMS sensors mainly include piezoresistive detection, capacitive detection, etc. The piezoresistive detection uses piezoresistors as sensitive units, and mainly uses the linear response range of resistance with external pressure. Due to the temperature drift effect of piezoresistors, The piezoresistive coefficient is limited, so it is difficult to further improve the response sensitivity, and these defects limit the application of this type of accelerometer in the field of high-sensitivity sensing. For capacitive detection, due t...

AI Technical Summary

Problems solved by technology

[0004] However, due to the relatively brittle GaAs material and low elasticity, the traditional micro-accelerometer based on GaAs has certain defects in the application process. During the process of applying stress in the sensitive direction, the root of the cantilever beam is easy to break due to the low elasticity of the material. Moreover, during the stress test of Raman pressure, the Raman frequency shift difference is disordered, and the direction of change is inconsistent.

Images