One-dimensional metal/semiconductor nanometer heterojunction transistor and preparation method thereof

Abstract

The invention provides a one-dimensional metal / semiconductor nanometer heterojunction transistor and a preparation method thereof. The preparation method comprises the following steps of: providing a silicon sheet with an oxide layer; arranging a first electrode pair and a second electrode pair on the oxide layer, wherein a pre-set angle is formed between the first electrode pair and the second electrode pair, the first electrode pair comprises a first electrode and a second electrode, the second electrode pair comprises a third electrode and a fourth electrode; putting electroplate liquid between the first electrode and the second electrode and applying an alternative current to forming a one-dimensional metal nanometer wire with a disconnected middle part; putting suspension solution containing a semiconductor nanometer wire at the middle disconnected part and applying the alternative current to connecting the semiconductor nanometer wire with the one-dimensional metal nanometer wire; and forming another one-dimensional metal nanometer wire between the third electrode and the fourth electrode. According to the method provided by the invention, the influence on scattering effects by one-dimensional conduction of current carriers is weakened and a one-dimensional heterojunction is assembled on a target position by utilizing an alternative current deposition and dielectrophoresis combined method. The one-dimensional metal / semiconductor nanometer heterojunction transistor has the advantages of no need of masks, vacuum environment and the like, has low cost, and is suitable for the batch production.

Description

technical field [0001] The invention relates to the technical fields of micro / nano electromechanical systems and micro / nano electronics, in particular to a one-dimensional metal / semiconductor nano-heterojunction transistor and a preparation method of the one-dimensional metal / semiconductor nano-heterojunction transistor. Background technique [0002] Different systems have different Fermi energy levels. When two objects with different work functions are in contact with each other, there is charge flow between them to achieve thermal equilibrium, and the two have the same Fermi energy level, and the flow of charges forms a space charge region, causing The band bending at the interface creates a Schottky barrier. The working principles of almost all important semiconductor devices today are related to heterojunctions and Schottky junctions, and one-dimensional metal / semiconductor heterojunctions are ideal functional units for the construction of nanoelectronic devices. Therefo...

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Problems solved by technology

However, the above-mentioned methods for preparing metal / semiconductor heterojunction nanostructures require expensive and complicated equipment, templates, high temperature and high vacuum environments, etc., which limit the batch and low-cost production of metal / semiconductor heterojunction nanostructures. application

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