Cleaning liquid and cleaning method
A cleaning solution and cleaning technology, applied in chemical instruments and methods, detergent compounding agents, detergent compositions, etc., can solve the problems of reduced productivity of semiconductor devices, difficulty in removing cerium oxide residues, etc., and achieve the effect of improving productivity
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Embodiment 1
[0048] In this example, as shown in Table 1, a cleaning solution having a hydrogen fluoride concentration of 0.1% by weight and a hydrochloric acid concentration of 10% by weight was prepared.
[0049] Next, chemical mechanical polishing using cerium oxide as abrasive grains was performed on a silicon substrate having a diameter of 200 mm on which the TEOS film was formed, and this was used as an object to be cleaned. In this object to be cleaned, by the measurement of the remaining state of the residue described later, 1000×10 9 atom / cm 2 Left and right cerium oxide was confirmed as a residue component.
[0050] Next, the above-mentioned cleaning solution was filled into a cleaning solution tank with a volume of 90 L, and the temperature of the cleaning solution was adjusted to 25° C. to stabilize the temperature of the cleaning solution. Here, after holding the object to be cleaned in the silicon substrate holding member made of PFA resin, it was immersed in the cleaning l...
Embodiment 2～11
[0052] In Examples 2 to 12, as shown in Table 1, except that the composition and concentration of the cleaning solution were changed, it carried out similarly to the said Example 1, and each cleaning solution was produced. Furthermore, the cleaning treatment using each cleaning solution and the like were performed in the same manner as in the above-mentioned Example 1. The results are shown in Table 1 below.
Embodiment 12
[0060] In this example, as the object to be cleaned, a silicon substrate with a diameter of 200 mm on which a polysilicon film was formed was used, and, as shown in Table 2, the composition and concentration of the cleaning liquid were changed. Each cleaning liquid was produced by carrying out. Furthermore, the cleaning treatment using each cleaning solution and the like were performed in the same manner as in the above-mentioned Example 1. The good and bad removal performance is to reduce the amount of granular solids after treatment to 8.5×10 9 atom / cm 2 The following conditions are regarded as good and will not be reduced to 8.5×10 9 atom / cm 2 situation as bad. The results are shown in Table 2 below.
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