A kind of preparation method of silicon nanowire

Abstract

The invention provides a preparation method for a silicon nanowire. The preparation method comprises the following steps of: providing a silicon-on-insulator (SOI) substrate, wherein the SOI substrate comprises a bottom silicon substrate, a buried oxide layer positioned on the bottom silicon substrate and a top silicon film positioned on the buried oxide layer; forming a silicon nitride layer on the top silicon film; photoetching and defining an active area by utilizing a first mask plate, and removing the silicon nitride layer outside the active area in an etching way; removing the top silicon film outside the active area in the etching way by taking the silicon nitride layer of the active area as a mask, and simultaneously making the sidewall of the top silicon film of the active area form a slope shape; performing an oxidization process on the top silicon film of the active area to form a sidewall oxide layer on the sidewall of the top silicon film of the active area; removing the silicon nitride layer of the active area in the etching way; photoetching and defining a silicon nanowire supporting area by utilizing a second mask plate, and etching the top silicon film of the active area under the protection of the sidewall oxide layer to form the silicon nanowire with a triangular section; and removing the sidewall oxide layer and part of the buried oxide layer in the etching way to suspend the silicon nanowire in midair. The preparation method is simple, controllable and low in production cost.

Description

technical field [0001] The invention relates to the technical field of integrated circuit manufacturing, in particular to a method for preparing silicon nanowires. Background technique [0002] In recent years, with people's continuous exploration and research in the field of nanotechnology, materials with one-dimensional nanostructures, such as silicon nanowires, have attracted more and more people's attention. Silicon nanowires have significant quantum effects, large specific surface area and other characteristics, and have good application prospects in MOS devices, sensors and other fields. How to prepare silicon nanowires in a simple, controllable and low-cost way has become an important topic. [0003] The preparation methods of silicon nanowires can be mainly divided into two categories: "bottom-up" and "top-down". The bottom-up approach mainly relies on nanotechnology, using catalysts to catalyze the growth of nanowires. Although this method can produce silicon nan...

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Problems solved by technology

[0006] The purpose of the present invention is to provide a method for preparing silicon nanowires, so as to solve the problem that the existing methods for preparing silicon nanowires have relatively high technological requirements, especially the high requirements for photolithography.

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