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Method of providing a semiconductor structure by forming a sacrificial structure

A semiconductor and main surface technology, applied in the measurement of fluid pressure through electromagnetic components, microstructure technology, microstructure devices, etc., can solve problems such as inappropriate surface orientation methods

Inactive Publication Date: 2016-04-20
INFINEON TECH AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This requires the creation or provision of potentially deep insulating regions within the semiconductor substrate, making conventional surface orientation methods such as doping unsuitable

Method used

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  • Method of providing a semiconductor structure by forming a sacrificial structure
  • Method of providing a semiconductor structure by forming a sacrificial structure
  • Method of providing a semiconductor structure by forming a sacrificial structure

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Embodiment Construction

[0022] In the following detailed description, reference is made to the accompanying drawings which form a part hereof, and in which are shown by way of illustration specific embodiments in which the invention may be practiced. In this regard, directional terms such as "top" and "bottom", "front" and "rear", "leading" and "trailing" etc. refer to the orientation of the figure(s) being described And use. Since components of an embodiment may be positioned in many different orientations, directional terminology is used for purposes of illustration and is in no way limiting. It is to be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. Therefore, the following detailed description should not be taken in a limiting sense, and the scope of the invention is defined by the appended claims.

[0023] It should be understood that the features of the various exemplary embodiments des...

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Abstract

The method involves etching an opening and a chip singulation trench into a substrate (102) are performed concurrently. A lamella (151) is defined between the opening and the chip singulation trench. A sense element is fabricated for sensing a deflection of the lamella. The structure is singulated at the chip singulation trench. An independent claim is included for semiconductor substrate.

Description

technical field [0001] The present invention relates to semiconductor technology, in particular to semiconductor manufacturing technology. Background technique [0002] Many applications in the field of microelectronics require the semiconductor substrate to be structured down to deep regions of the substrate. Examples of these applications can be found in the field of power electronics (high voltage components), in the field of sensor devices, microelectromechanical systems (MEMS), etc. Deep structuring of semiconductor substrates is sometimes referred to as "3D integration". Creating cavities and / or recesses in semiconductor substrates typically requires either etching the substrate from one of the main surfaces of the substrate, or depositing a new substance on the main surface of the semiconductor substrate and simultaneously masking future cavities Or the position or position of the groove. Especially when the cavity is obtained by means of an etching process, the di...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81C1/00G01L9/00
CPCG01L9/0045B81B2201/0264B81C1/00158
Inventor B.宾得B.菲斯特T.考奇S.科尔布M.米勒
Owner INFINEON TECH AG
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